Modified metal-induced lateral crystallization using amorphous Ge/Si layered structure

Hiroshi Kanno; Atsushi Kenjo; Taizoh Sadoh; Masanobu Miyao

doi:10.1063/1.1780595

Modified metal-induced lateral crystallization using amorphous Ge/Si layered structure

Hiroshi Kanno, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

Electronic Devices

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21 Citations (Scopus)

Abstract

Amorphous layered structures of Ge/Si were used for investigating metal-induced lateral crystallization (MILC). Secondary-ion mass spectroscopy (SIMS) assisted in the evaluation of the concentration profiles of Si, Ge, and Ni atoms at room temperature. As compared with the conventional MILC using a-Si single layers, modified MILC velocity increased by three times. In a short time annealing, poly-Si films with large areas were obtained. The bond rearrangement in the a-Si layers that was induced by crystal nucleation in a-Ge layers was responsible for the enhancement obtained for the layered structures.

Original language	English
Pages (from-to)	899-901
Number of pages	3
Journal	Applied Physics Letters
Volume	85
Issue number	6
DOIs	https://doi.org/10.1063/1.1780595
Publication status	Published - Aug 9 2004

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1780595

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title = "Modified metal-induced lateral crystallization using amorphous Ge/Si layered structure",

abstract = "Amorphous layered structures of Ge/Si were used for investigating metal-induced lateral crystallization (MILC). Secondary-ion mass spectroscopy (SIMS) assisted in the evaluation of the concentration profiles of Si, Ge, and Ni atoms at room temperature. As compared with the conventional MILC using a-Si single layers, modified MILC velocity increased by three times. In a short time annealing, poly-Si films with large areas were obtained. The bond rearrangement in the a-Si layers that was induced by crystal nucleation in a-Ge layers was responsible for the enhancement obtained for the layered structures.",

author = "Hiroshi Kanno and Atsushi Kenjo and Taizoh Sadoh and Masanobu Miyao",

note = "Funding Information: A part of this work was supported by the Grant-in-Aid for Scientific Research and the Special Coordination Funds for Promoting Science and Technology from the Ministry of Education, Culture, Sports, Science, and Technology of Japan.",

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T1 - Modified metal-induced lateral crystallization using amorphous Ge/Si layered structure

AU - Kanno, Hiroshi

AU - Kenjo, Atsushi

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

N1 - Funding Information: A part of this work was supported by the Grant-in-Aid for Scientific Research and the Special Coordination Funds for Promoting Science and Technology from the Ministry of Education, Culture, Sports, Science, and Technology of Japan.

PY - 2004/8/9

Y1 - 2004/8/9

N2 - Amorphous layered structures of Ge/Si were used for investigating metal-induced lateral crystallization (MILC). Secondary-ion mass spectroscopy (SIMS) assisted in the evaluation of the concentration profiles of Si, Ge, and Ni atoms at room temperature. As compared with the conventional MILC using a-Si single layers, modified MILC velocity increased by three times. In a short time annealing, poly-Si films with large areas were obtained. The bond rearrangement in the a-Si layers that was induced by crystal nucleation in a-Ge layers was responsible for the enhancement obtained for the layered structures.

AB - Amorphous layered structures of Ge/Si were used for investigating metal-induced lateral crystallization (MILC). Secondary-ion mass spectroscopy (SIMS) assisted in the evaluation of the concentration profiles of Si, Ge, and Ni atoms at room temperature. As compared with the conventional MILC using a-Si single layers, modified MILC velocity increased by three times. In a short time annealing, poly-Si films with large areas were obtained. The bond rearrangement in the a-Si layers that was induced by crystal nucleation in a-Ge layers was responsible for the enhancement obtained for the layered structures.

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Modified metal-induced lateral crystallization using amorphous Ge/Si layered structure

Abstract

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