TY - JOUR
T1 - Modification of heat and mass transfers and their effect on the crystal-melt interface shape of Si single crystal during Czochralski crystal growth
AU - Watanabe, Masahito
AU - Kakimoto, Koichi
AU - Eguchi, Minoru
AU - Hibiya, Taketoshi
PY - 1997
Y1 - 1997
N2 - The modification of heat transfer in molten silicon during Czochralski (CZ) crystal growth is discussed by focusing on the transition of the flow mode from axisymmetric to nonaxisymmetric, in order to clarify the mechanism of crystal-melt interface shape deformation. Heat transfer in silicon melt is observed by measuring the difference in temperature near the crucible wall and at the crystal-melt interface with simultaneous observation of molten silicon flow. We confirm that the heat transfer coefficient of silicon melt is reduced when the flow mode is changed from axisymmetric to non-axisymmetric. The crystal-melt interface shape changed as a result of the modified heat transfer, which is due to the flow mode transition from axisymmetric to non-axisymmetric.
AB - The modification of heat transfer in molten silicon during Czochralski (CZ) crystal growth is discussed by focusing on the transition of the flow mode from axisymmetric to nonaxisymmetric, in order to clarify the mechanism of crystal-melt interface shape deformation. Heat transfer in silicon melt is observed by measuring the difference in temperature near the crucible wall and at the crystal-melt interface with simultaneous observation of molten silicon flow. We confirm that the heat transfer coefficient of silicon melt is reduced when the flow mode is changed from axisymmetric to non-axisymmetric. The crystal-melt interface shape changed as a result of the modified heat transfer, which is due to the flow mode transition from axisymmetric to non-axisymmetric.
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U2 - 10.1143/jjap.36.6181
DO - 10.1143/jjap.36.6181
M3 - Article
AN - SCOPUS:0031249171
SN - 0021-4922
VL - 36
SP - 6181
EP - 6186
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
IS - 10
ER -