Modeling and simulation of Si crystal growth from melt

Lijun Liu, Hiroaki Miyazawa, Satoshi Nakano, Xin Liu, Zaoyang Li, Koichi Kakimoto

Research output: Contribution to journalConference articlepeer-review

1 Citation (Scopus)


A numerical simulator was developed with a global model of heat transfer for any crystal growth taking place at high temperature. Convective, conductive and radiative heat transfers in the furnace are solved together in a conjugated way by a finite volume method. A three-dimensional (3D) global model was especially developed for simulation of heat transfer in any crystal growth with 3D features. The model enables 3D global simulation be conducted with moderate require-ment of computer resources. The application of this numerical simulator to a CZ growth and a directional solidification process for Si crystals, the two major production methods for crystalline Si for solar cells, was introduced. Some typical results were presented, showing the importance and effectiveness of numerical simulation in analyzing and improving these kinds of Si crystal growth processes from melt.

Original languageEnglish
Pages (from-to)645-652
Number of pages8
JournalPhysica Status Solidi (C) Current Topics in Solid State Physics
Issue number3
Publication statusPublished - 2009
Event3rd Sino-German Symposium "The Silicon Age: Silicon for Microelectronics, Photonics and Photovoltaics" - Hangzhou, China
Duration: Jun 9 2008Jun 14 2008

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics


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