MOCVD of single-axis c-oriented strontium bismuth titanate thin films and their electrical properties

Kenji Takahashi; Muneyasu Suzuki; Takahiro Oikawa; Takashi Kojima; Takayuki Watanabe; Hiroshi Funakubo

doi:10.1002/cvde.200506373

MOCVD of single-axis c-oriented strontium bismuth titanate thin films and their electrical properties

Kenji Takahashi, Muneyasu Suzuki, Takahiro Oikawa, Takashi Kojima, Takayuki Watanabe, Hiroshi Funakubo

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

SrBi₄Ti₄Oi₁₅ (SBTi) films were fabricated for the first time at 700°C by thermal metal-organic (MO)CVD from a Bi(CH₃)₃Sr(O₂C₁₁H ₁₉))₂(C₈H₂₃N₅) ₂-Ti(O·i-C₃H₇)₄-O ₂ system. The deposition rate of each constituent oxide linearly increased with an increase in the input gas-flow rate of the corresponding source. Perfectly single-axis, c-oriented SBTi films were obtained on (111)Pt/TiO₂/SiO₂/(100)Si substrates by inserting a (100)c,-oriented LaNiO₃ conductive buffer layer as an interfacial template. These films had a relative dielectric constant of about 140 which showed no decrease when the film thickness was reduced to 30 nm.

Original language	English
Pages (from-to)	136-142
Number of pages	7
Journal	Chemical Vapor Deposition
Volume	12
Issue number	2-3
DOIs	https://doi.org/10.1002/cvde.200506373
Publication status	Published - Mar 2006
Externally published	Yes

All Science Journal Classification (ASJC) codes

Chemistry(all)
Surfaces and Interfaces
Process Chemistry and Technology

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10.1002/cvde.200506373

Cite this

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title = "MOCVD of single-axis c-oriented strontium bismuth titanate thin films and their electrical properties",

abstract = "SrBi4Ti4Oi15 (SBTi) films were fabricated for the first time at 700°C by thermal metal-organic (MO)CVD from a Bi(CH3)3Sr(O2C11H 19))2(C8H23N5) 2-Ti(O·i-C3H7)4-O 2 system. The deposition rate of each constituent oxide linearly increased with an increase in the input gas-flow rate of the corresponding source. Perfectly single-axis, c-oriented SBTi films were obtained on (111)Pt/TiO2/SiO2/(100)Si substrates by inserting a (100)c,-oriented LaNiO3 conductive buffer layer as an interfacial template. These films had a relative dielectric constant of about 140 which showed no decrease when the film thickness was reduced to 30 nm.",

author = "Kenji Takahashi and Muneyasu Suzuki and Takahiro Oikawa and Takashi Kojima and Takayuki Watanabe and Hiroshi Funakubo",

year = "2006",

month = mar,

doi = "10.1002/cvde.200506373",

language = "English",

volume = "12",

pages = "136--142",

journal = "Chemical Vapor Deposition",

issn = "0948-1907",

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T1 - MOCVD of single-axis c-oriented strontium bismuth titanate thin films and their electrical properties

AU - Takahashi, Kenji

AU - Suzuki, Muneyasu

AU - Oikawa, Takahiro

AU - Kojima, Takashi

AU - Watanabe, Takayuki

AU - Funakubo, Hiroshi

PY - 2006/3

Y1 - 2006/3

N2 - SrBi4Ti4Oi15 (SBTi) films were fabricated for the first time at 700°C by thermal metal-organic (MO)CVD from a Bi(CH3)3Sr(O2C11H 19))2(C8H23N5) 2-Ti(O·i-C3H7)4-O 2 system. The deposition rate of each constituent oxide linearly increased with an increase in the input gas-flow rate of the corresponding source. Perfectly single-axis, c-oriented SBTi films were obtained on (111)Pt/TiO2/SiO2/(100)Si substrates by inserting a (100)c,-oriented LaNiO3 conductive buffer layer as an interfacial template. These films had a relative dielectric constant of about 140 which showed no decrease when the film thickness was reduced to 30 nm.

AB - SrBi4Ti4Oi15 (SBTi) films were fabricated for the first time at 700°C by thermal metal-organic (MO)CVD from a Bi(CH3)3Sr(O2C11H 19))2(C8H23N5) 2-Ti(O·i-C3H7)4-O 2 system. The deposition rate of each constituent oxide linearly increased with an increase in the input gas-flow rate of the corresponding source. Perfectly single-axis, c-oriented SBTi films were obtained on (111)Pt/TiO2/SiO2/(100)Si substrates by inserting a (100)c,-oriented LaNiO3 conductive buffer layer as an interfacial template. These films had a relative dielectric constant of about 140 which showed no decrease when the film thickness was reduced to 30 nm.

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MOCVD of single-axis c-oriented strontium bismuth titanate thin films and their electrical properties

Abstract

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