Mixed-Dimensional Anti-ambipolar Phototransistors Based on 1D GaAsSb/2D MoS2Heterojunctions

Wei Wang, Weijun Wang, You Meng, Quan Quan, Zhengxun Lai, Dengji Li, Pengshan Xie, Sen Po Yip, Xiaolin Kang, Xiuming Bu, Dong Chen, Chuntai Liu, Johnny C. Ho

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)


The incapability of modulating the photoresponse of assembled heterostructure devices has remained a challenge for the development of optoelectronics with multifunctionality. Here, a gate-tunable and anti-ambipolar phototransistor is reported based on 1D GaAsSb nanowire/2D MoS2 nanoflake mixed-dimensional van der Waals heterojunctions. The resulting heterojunction shows apparently asymmetric control over the anti-ambipolar transfer characteristics, possessing potential to implement electronic functions in logic circuits. Meanwhile, such an anti-ambipolar device allows the synchronous adjustment of band slope and depletion regions by gating in both components, thereby giving rise to the gate-tunability of the photoresponse. Coupled with the synergistic effect of the materials in different dimensionality, the hybrid heterojunction can be readily modulated by the external gate to achieve a high-performance photodetector exhibiting a large on/off current ratio of 4 × 104, fast response of 50 μs, and high detectivity of 1.64 × 1011 Jones. Due to the formation of type-II band alignment and strong interfacial coupling, a prominent photovoltaic response is explored in the heterojunction as well. Finally, a visible image sensor based on this hybrid device is demonstrated with good imaging capability, suggesting the promising application prospect in future optoelectronic systems.

Original languageEnglish
Pages (from-to)11036-11048
Number of pages13
JournalACS nano
Issue number7
Publication statusPublished - Jul 26 2022

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Engineering(all)
  • Physics and Astronomy(all)


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