Microstructure of bulk AlN grown by a new solution growth method

Yoshihiro Kangawa, Noriyuki Kuwano, Boris M. Epelbaum, Koichi Kakimoto

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3 Citations (Scopus)


We used transmission electron microscopy to analyse the microstructures in a thick AlN layer grown on a self-nucleated, columnar AlN seed crystal. The growth direction of the AlN layer grown by a new solution growth method was [1100]. The threading dislocation (TD) density near the epilayer-seed interface (on the seed crystal) was 109 cm-2. However, owing to dislocation annihilation, the TD density decreased to 108 cm-2 at a thickness of ∼5 μm. These results imply that the new solution growth method can grow high-crystalline-quality bulk AlN under moderate growth conditions (τ ≈ 1200 °C, nitrogen pressure = 1 atm).

Original languageEnglish
Article number120202
JournalJapanese journal of applied physics
Issue number12
Publication statusPublished - Dec 2011

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Physics and Astronomy


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