Micro-photoluminescence mapping of light emissions from aluminum-coated InGaN/GaN quantum wells

Kazutaka Tateishi; Pangpang Wang; Sou Ryuzaki; Mitsuru Funato; Yoichi Kawakami; Koichi Okamoto; Kaoru Tamada

doi:10.7567/1882-0786/ab0911

Micro-photoluminescence mapping of light emissions from aluminum-coated InGaN/GaN quantum wells

Kazutaka Tateishi, Pangpang Wang, Sou Ryuzaki, Mitsuru Funato, Yoichi Kawakami, Koichi Okamoto, Kaoru Tamada

Research output: Contribution to journal › Article › peer-review

Abstract

Micro-photoluminescence (PL) mapping was investigated for Al-coated InGaN/GaN quantum wells (QWs), which showed huge PL enhancement by the surface plasmon (SP) resonance. The obtained images show inhomogeneity at the micro-meter scale; in addition, the region with lower PL intensities tend to have a longer PL wavelength for bare QWs. This correlation changed with an Al coating, positive correlations were observed in an area with a relatively short peak wavelength with blue-shift. Conversely, negative correlations were observed at longer peak wavelengths. These results suggest that the quantum-confined Stark effect (QCSE) was screened by the enhanced electrical-field of the SP resonance.

Original language	English
Article number	052016
Journal	Applied Physics Express
Volume	12
Issue number	5
DOIs	https://doi.org/10.7567/1882-0786/ab0911
Publication status	Published - May 1 2019

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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title = "Micro-photoluminescence mapping of light emissions from aluminum-coated InGaN/GaN quantum wells",

abstract = "Micro-photoluminescence (PL) mapping was investigated for Al-coated InGaN/GaN quantum wells (QWs), which showed huge PL enhancement by the surface plasmon (SP) resonance. The obtained images show inhomogeneity at the micro-meter scale; in addition, the region with lower PL intensities tend to have a longer PL wavelength for bare QWs. This correlation changed with an Al coating, positive correlations were observed in an area with a relatively short peak wavelength with blue-shift. Conversely, negative correlations were observed at longer peak wavelengths. These results suggest that the quantum-confined Stark effect (QCSE) was screened by the enhanced electrical-field of the SP resonance.",

author = "Kazutaka Tateishi and Pangpang Wang and Sou Ryuzaki and Mitsuru Funato and Yoichi Kawakami and Koichi Okamoto and Kaoru Tamada",

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T1 - Micro-photoluminescence mapping of light emissions from aluminum-coated InGaN/GaN quantum wells

AU - Tateishi, Kazutaka

AU - Wang, Pangpang

AU - Ryuzaki, Sou

AU - Funato, Mitsuru

AU - Kawakami, Yoichi

AU - Okamoto, Koichi

AU - Tamada, Kaoru

PY - 2019/5/1

Y1 - 2019/5/1

N2 - Micro-photoluminescence (PL) mapping was investigated for Al-coated InGaN/GaN quantum wells (QWs), which showed huge PL enhancement by the surface plasmon (SP) resonance. The obtained images show inhomogeneity at the micro-meter scale; in addition, the region with lower PL intensities tend to have a longer PL wavelength for bare QWs. This correlation changed with an Al coating, positive correlations were observed in an area with a relatively short peak wavelength with blue-shift. Conversely, negative correlations were observed at longer peak wavelengths. These results suggest that the quantum-confined Stark effect (QCSE) was screened by the enhanced electrical-field of the SP resonance.

AB - Micro-photoluminescence (PL) mapping was investigated for Al-coated InGaN/GaN quantum wells (QWs), which showed huge PL enhancement by the surface plasmon (SP) resonance. The obtained images show inhomogeneity at the micro-meter scale; in addition, the region with lower PL intensities tend to have a longer PL wavelength for bare QWs. This correlation changed with an Al coating, positive correlations were observed in an area with a relatively short peak wavelength with blue-shift. Conversely, negative correlations were observed at longer peak wavelengths. These results suggest that the quantum-confined Stark effect (QCSE) was screened by the enhanced electrical-field of the SP resonance.

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Micro-photoluminescence mapping of light emissions from aluminum-coated InGaN/GaN quantum wells

Abstract

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