InxGa1-xN has attracted considerable interest as a material for multi junction solar cells. In this study, we performed thermodynamic analyses to calculate the relationship between the input In molar ratio and solid composition of a coherently grown InxGa 1-xN thin film that is subjected to planar compressive or tensile stress. The theoretical approach incorporates energy loss of a thin-film system due to lattice constraint from the substrate. The results show that the indium composition x of coherently grown InxGa1-xN is lower than that of stressfree InGaN. This represents the composition pulling effect.
All Science Journal Classification (ASJC) codes
- General Engineering
- General Physics and Astronomy