Metal-Induced Lateral Crystallization of Amorphous Silicon under Reduced Nickel Supply

Metal-induced lateral crystallization(MILC) under reduced Ni supply have been investigated. By reducing the amount of Ni supply, the dependence of poly-Si growth characteristics on annealing temperature and on Ni source pattern was found to appear. Growth characteristics were changed from even growth front to un-even needlelike edge with reducing annealing temperature. Growth at high temperature annealing was found to be dominated by diffusion of Ni. Needlelike crystal having about 10μm length and about 160nm width was obtained at 450°C annealing. The dependence of growth characteristics with high annealing temperature on Ni pattern were considered to be owing Ni distribution and the nucleation rate was depend on Ni pattern at low temperature.