MESFET’s on a GaAs-on-Insulator Structure

Kazuo Tsutsui; Tadao Nakazawa; Tanemasa Asano; Hiroshi Ishiwara; Seijiro Furukawa

doi:10.1109/EDL.1987.26629

MESFET’s on a GaAs-on-Insulator Structure

Kazuo Tsutsui
, Tadao Nakazawa
, Tanemasa Asano
, Hiroshi Ishiwara
, Seijiro Furukawa

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

MESFET’s were fabricated on a GaAs-on-insulator structure which was grown by molecular beam epitaxy (MBE) on a GaAs substrate covered with a crystalline insulator film, Ca_xSri_1-x,F₂. The g_mvalue of 71 mS/mm was obtained for an FET with a gate length of 3 μm. Complete isolation of MESFET’s by island formation of GaAs on the fluoride films was also attained for the first time using a conventional wet etching process.

Original language	English
Pages (from-to)	277-279
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	EDL-8
Issue number	6
DOIs	https://doi.org/10.1109/EDL.1987.26629
Publication status	Published - Jun 1987
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/EDL.1987.26629

Cite this

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title = "MESFET{\textquoteright}s on a GaAs-on-Insulator Structure",

abstract = "MESFET{\textquoteright}s were fabricated on a GaAs-on-insulator structure which was grown by molecular beam epitaxy (MBE) on a GaAs substrate covered with a crystalline insulator film, CaxSri1-x,F2. The gmvalue of 71 mS/mm was obtained for an FET with a gate length of 3 μm. Complete isolation of MESFET{\textquoteright}s by island formation of GaAs on the fluoride films was also attained for the first time using a conventional wet etching process.",

author = "Kazuo Tsutsui and Tadao Nakazawa and Tanemasa Asano and Hiroshi Ishiwara and Seijiro Furukawa",

note = "Funding Information: Manuscript received February 11, 1987; revised April 9, 1987. This work was supported by a grant-in-aid for special distinguished research (59060002) from the Ministry of Education, Science, and Culture of Japan. The authors are with the Department of Applied Electronics, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 227, Japan. IEEE Log Number 8715236.",

year = "1987",

month = jun,

doi = "10.1109/EDL.1987.26629",

language = "English",

volume = "EDL-8",

pages = "277--279",

journal = "IEEE Electron Device Letters",

issn = "0741-3106",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "6",

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T1 - MESFET’s on a GaAs-on-Insulator Structure

AU - Tsutsui, Kazuo

AU - Nakazawa, Tadao

AU - Asano, Tanemasa

AU - Ishiwara, Hiroshi

AU - Furukawa, Seijiro

N1 - Funding Information: Manuscript received February 11, 1987; revised April 9, 1987. This work was supported by a grant-in-aid for special distinguished research (59060002) from the Ministry of Education, Science, and Culture of Japan. The authors are with the Department of Applied Electronics, Tokyo Institute of Technology, 4259 Nagatsuda, Midori-ku, Yokohama 227, Japan. IEEE Log Number 8715236.

PY - 1987/6

Y1 - 1987/6

N2 - MESFET’s were fabricated on a GaAs-on-insulator structure which was grown by molecular beam epitaxy (MBE) on a GaAs substrate covered with a crystalline insulator film, CaxSri1-x,F2. The gmvalue of 71 mS/mm was obtained for an FET with a gate length of 3 μm. Complete isolation of MESFET’s by island formation of GaAs on the fluoride films was also attained for the first time using a conventional wet etching process.

AB - MESFET’s were fabricated on a GaAs-on-insulator structure which was grown by molecular beam epitaxy (MBE) on a GaAs substrate covered with a crystalline insulator film, CaxSri1-x,F2. The gmvalue of 71 mS/mm was obtained for an FET with a gate length of 3 μm. Complete isolation of MESFET’s by island formation of GaAs on the fluoride films was also attained for the first time using a conventional wet etching process.

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DO - 10.1109/EDL.1987.26629

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SP - 277

EP - 279

JO - IEEE Electron Device Letters

JF - IEEE Electron Device Letters

IS - 6

ER -

MESFET’s on a GaAs-on-Insulator Structure

Abstract

All Science Journal Classification (ASJC) codes

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