Memory effects in ferroelectric/perovskite-semiconductor hetero-structures

Yukio Watanabe; M. Tanamura; Y. Matsumoto

doi:10.1080/10584589608013088

Memory effects in ferroelectric/perovskite-semiconductor hetero-structures

Yukio Watanabe, M. Tanamura, Y. Matsumoto

Research output: Contribution to journal › Article › peer-review

Abstract

Epitaxial ferroelectric heterostructures are proposed which use parent phases of the cuprate high-T_c superconductors and the related perovskite semiconductors. Properties of prototype field effect transistors (FET) and diodes employing this structures are presented. The FETs markedly improved the memory retention time over the conventional ferroelectric FETs. It retained one-half of the initial modulation after 10 months. Additionally, they exhibited switching time of 10-100 μs at 7V despite their large feature sizes (100 μm). A new memory effect was found in ferroelectric diodes consisted of several combinations of ferroelectric and perovskite semiconductors. Their conductivity in the forward bias was reproducibly switched between high and low values by positive and negative biases.

Original language	English
Pages (from-to)	141-148
Number of pages	8
Journal	Integrated Ferroelectrics
Volume	13
Issue number	1-3
DOIs	https://doi.org/10.1080/10584589608013088
Publication status	Published - 1996
Externally published	Yes

All Science Journal Classification (ASJC) codes

Control and Systems Engineering
Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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10.1080/10584589608013088

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title = "Memory effects in ferroelectric/perovskite-semiconductor hetero-structures",

abstract = "Epitaxial ferroelectric heterostructures are proposed which use parent phases of the cuprate high-Tc superconductors and the related perovskite semiconductors. Properties of prototype field effect transistors (FET) and diodes employing this structures are presented. The FETs markedly improved the memory retention time over the conventional ferroelectric FETs. It retained one-half of the initial modulation after 10 months. Additionally, they exhibited switching time of 10-100 μs at 7V despite their large feature sizes (100 μm). A new memory effect was found in ferroelectric diodes consisted of several combinations of ferroelectric and perovskite semiconductors. Their conductivity in the forward bias was reproducibly switched between high and low values by positive and negative biases.",

author = "Yukio Watanabe and M. Tanamura and Y. Matsumoto",

year = "1996",

doi = "10.1080/10584589608013088",

language = "English",

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T1 - Memory effects in ferroelectric/perovskite-semiconductor hetero-structures

AU - Watanabe, Yukio

AU - Tanamura, M.

AU - Matsumoto, Y.

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Y1 - 1996

N2 - Epitaxial ferroelectric heterostructures are proposed which use parent phases of the cuprate high-Tc superconductors and the related perovskite semiconductors. Properties of prototype field effect transistors (FET) and diodes employing this structures are presented. The FETs markedly improved the memory retention time over the conventional ferroelectric FETs. It retained one-half of the initial modulation after 10 months. Additionally, they exhibited switching time of 10-100 μs at 7V despite their large feature sizes (100 μm). A new memory effect was found in ferroelectric diodes consisted of several combinations of ferroelectric and perovskite semiconductors. Their conductivity in the forward bias was reproducibly switched between high and low values by positive and negative biases.

AB - Epitaxial ferroelectric heterostructures are proposed which use parent phases of the cuprate high-Tc superconductors and the related perovskite semiconductors. Properties of prototype field effect transistors (FET) and diodes employing this structures are presented. The FETs markedly improved the memory retention time over the conventional ferroelectric FETs. It retained one-half of the initial modulation after 10 months. Additionally, they exhibited switching time of 10-100 μs at 7V despite their large feature sizes (100 μm). A new memory effect was found in ferroelectric diodes consisted of several combinations of ferroelectric and perovskite semiconductors. Their conductivity in the forward bias was reproducibly switched between high and low values by positive and negative biases.

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Memory effects in ferroelectric/perovskite-semiconductor hetero-structures

Abstract

All Science Journal Classification (ASJC) codes

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