Abstract
The three-dimensional time-dependent flow of the silicon melt in an electromagnetic Czochralski (EMCZ) crystal growth system with cusp-shaped magnetic fields was numerically investigated. Calculations were carried out using five different configurations of the melt and cusp-shaped magnetic fields. The results indicated that oxygen was transferred from a part of a sidewall of the crucible on which a cusp plane of the magnetic fields exists. The results also showed that the oxygen concentration at the solid-liquid interface of silicon increased when the cusp plane of the cusp-shaped magnetic fields shifted from the bottom of the crucible to the surface of the melt.
| Original language | English |
|---|---|
| Pages (from-to) | G648-G652 |
| Journal | Journal of the Electrochemical Society |
| Volume | 150 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - Oct 2003 |
UN SDGs
This output contributes to the following UN Sustainable Development Goals (SDGs)
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SDG 7 Affordable and Clean Energy
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
- Electrochemistry
- Materials Chemistry
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