Mechanism of Heat and Oxygen Transfer under Electromagnetic CZ Crystal Growth with Cusp-Shaped Magnetic Fields

Koichi Kakimoto; Akimasa Tashiro; Hideo Ishii; Takashige Shinozaki

doi:10.1149/1.1605423

Mechanism of Heat and Oxygen Transfer under Electromagnetic CZ Crystal Growth with Cusp-Shaped Magnetic Fields

Koichi Kakimoto, Akimasa Tashiro, Hideo Ishii, Takashige Shinozaki

Division of Renewable Energy Dynamics

Research output: Contribution to journal › Article › peer-review

5 Citations (Scopus)

Abstract

The three-dimensional time-dependent flow of the silicon melt in an electromagnetic Czochralski (EMCZ) crystal growth system with cusp-shaped magnetic fields was numerically investigated. Calculations were carried out using five different configurations of the melt and cusp-shaped magnetic fields. The results indicated that oxygen was transferred from a part of a sidewall of the crucible on which a cusp plane of the magnetic fields exists. The results also showed that the oxygen concentration at the solid-liquid interface of silicon increased when the cusp plane of the cusp-shaped magnetic fields shifted from the bottom of the crucible to the surface of the melt.

Original language	English
Journal	Journal of the Electrochemical Society
Volume	150
Issue number	10
DOIs	https://doi.org/10.1149/1.1605423
Publication status	Published - Oct 1 2003

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

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10.1149/1.1605423

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@article{1df9929062194ddb819d7a80c6332b57,

title = "Mechanism of Heat and Oxygen Transfer under Electromagnetic CZ Crystal Growth with Cusp-Shaped Magnetic Fields",

abstract = "The three-dimensional time-dependent flow of the silicon melt in an electromagnetic Czochralski (EMCZ) crystal growth system with cusp-shaped magnetic fields was numerically investigated. Calculations were carried out using five different configurations of the melt and cusp-shaped magnetic fields. The results indicated that oxygen was transferred from a part of a sidewall of the crucible on which a cusp plane of the magnetic fields exists. The results also showed that the oxygen concentration at the solid-liquid interface of silicon increased when the cusp plane of the cusp-shaped magnetic fields shifted from the bottom of the crucible to the surface of the melt.",

author = "Koichi Kakimoto and Akimasa Tashiro and Hideo Ishii and Takashige Shinozaki",

year = "2003",

month = oct,

day = "1",

doi = "10.1149/1.1605423",

language = "English",

volume = "150",

journal = "Journal of the Electrochemical Society",

issn = "0013-4651",

publisher = "Electrochemical Society, Inc.",

number = "10",

}

TY - JOUR

T1 - Mechanism of Heat and Oxygen Transfer under Electromagnetic CZ Crystal Growth with Cusp-Shaped Magnetic Fields

AU - Kakimoto, Koichi

AU - Tashiro, Akimasa

AU - Ishii, Hideo

AU - Shinozaki, Takashige

PY - 2003/10/1

Y1 - 2003/10/1

N2 - The three-dimensional time-dependent flow of the silicon melt in an electromagnetic Czochralski (EMCZ) crystal growth system with cusp-shaped magnetic fields was numerically investigated. Calculations were carried out using five different configurations of the melt and cusp-shaped magnetic fields. The results indicated that oxygen was transferred from a part of a sidewall of the crucible on which a cusp plane of the magnetic fields exists. The results also showed that the oxygen concentration at the solid-liquid interface of silicon increased when the cusp plane of the cusp-shaped magnetic fields shifted from the bottom of the crucible to the surface of the melt.

AB - The three-dimensional time-dependent flow of the silicon melt in an electromagnetic Czochralski (EMCZ) crystal growth system with cusp-shaped magnetic fields was numerically investigated. Calculations were carried out using five different configurations of the melt and cusp-shaped magnetic fields. The results indicated that oxygen was transferred from a part of a sidewall of the crucible on which a cusp plane of the magnetic fields exists. The results also showed that the oxygen concentration at the solid-liquid interface of silicon increased when the cusp plane of the cusp-shaped magnetic fields shifted from the bottom of the crucible to the surface of the melt.

UR - http://www.scopus.com/inward/record.url?scp=0142116355&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0142116355&partnerID=8YFLogxK

U2 - 10.1149/1.1605423

DO - 10.1149/1.1605423

M3 - Article

AN - SCOPUS:0142116355

SN - 0013-4651

VL - 150

JO - Journal of the Electrochemical Society

JF - Journal of the Electrochemical Society

IS - 10

ER -

Mechanism of Heat and Oxygen Transfer under Electromagnetic CZ Crystal Growth with Cusp-Shaped Magnetic Fields

Abstract

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