Mechanism of Cu deposition from Cu(EDMDD)2 using H-assisted plasma CVD

Kosuke Takenaka, Kazunori Koga, Masaharu Shiratani, Yukio Watanabe, Toshiya Shingen

Research output: Contribution to journalArticlepeer-review

16 Citations (Scopus)


Mechanism of high purity Cu thin film deposition from a new F-free Cu complex, Cu(EDMDD)2 have been studied using H-assisted plasma CVD (HAPCVD). The species of Cu(EDMDD) is the dominant neutral radical dissociated from Cu(EDMDD)2 by electron impact. In situ measurements by Fourier transform infrared (FTIR) spectroscopy show that H atoms are quite effective in removing impurities in Cu films. The simplified version of important surface reaction is Cu(EDMDD) + H→Cu + H(EDMDD). Cu films deposited by HAPCVD have a low as-deposited resistivity of 1.84 μΩ cm and is 20 nm thick in trenches 0.5 μm wide and 2.73 μm deep.

Original languageEnglish
Pages (from-to)197-201
Number of pages5
JournalThin Solid Films
Publication statusPublished - May 26 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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