Measurement of strain in freestanding Si/SixNy membrane by convergent beam electron diffraction and finite element method

Hongye Gao; Ken Ichi Ikeda; Satoshi Hata; Hideharu Nakashima; Dong Wang; Hiroshi Nakashima

doi:10.1143/JJAP.49.090208

Measurement of strain in freestanding Si/Si_xN_y membrane by convergent beam electron diffraction and finite element method

Hongye Gao, Ken Ichi Ikeda, Satoshi Hata, Hideharu Nakashima, Dong Wang, Hiroshi Nakashima

Research output: Contribution to journal › Article › peer-review

Abstract

Strain in a bridge-shaped freestanding Si membrane (FSSM) induced by depositing an amorphous Si_xN_y layer was measured by convergentbeam electron diffraction (CBED) and the finite element method (FEM). CBED results show that the strain magnitude depends negatively on the FSSM thickness, and compressive strain along the length of the FSSM is increased by approximately 0.1% at the end of the FSSM. FEM is used as a supplementary method to CBED for calculating the strain relaxation in three-dimension in the FSSM.

Original language	English
Article number	090208
Journal	Japanese journal of applied physics
Volume	49
Issue number	9 PART 1
DOIs	https://doi.org/10.1143/JJAP.49.090208
Publication status	Published - Sept 2010

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.1143/JJAP.49.090208

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title = "Measurement of strain in freestanding Si/SixNy membrane by convergent beam electron diffraction and finite element method",

abstract = "Strain in a bridge-shaped freestanding Si membrane (FSSM) induced by depositing an amorphous SixNy layer was measured by convergentbeam electron diffraction (CBED) and the finite element method (FEM). CBED results show that the strain magnitude depends negatively on the FSSM thickness, and compressive strain along the length of the FSSM is increased by approximately 0.1% at the end of the FSSM. FEM is used as a supplementary method to CBED for calculating the strain relaxation in three-dimension in the FSSM.",

author = "Hongye Gao and Ikeda, {Ken Ichi} and Satoshi Hata and Hideharu Nakashima and Dong Wang and Hiroshi Nakashima",

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AU - Gao, Hongye

AU - Ikeda, Ken Ichi

AU - Hata, Satoshi

AU - Nakashima, Hideharu

AU - Wang, Dong

AU - Nakashima, Hiroshi

PY - 2010/9

Y1 - 2010/9

N2 - Strain in a bridge-shaped freestanding Si membrane (FSSM) induced by depositing an amorphous SixNy layer was measured by convergentbeam electron diffraction (CBED) and the finite element method (FEM). CBED results show that the strain magnitude depends negatively on the FSSM thickness, and compressive strain along the length of the FSSM is increased by approximately 0.1% at the end of the FSSM. FEM is used as a supplementary method to CBED for calculating the strain relaxation in three-dimension in the FSSM.

AB - Strain in a bridge-shaped freestanding Si membrane (FSSM) induced by depositing an amorphous SixNy layer was measured by convergentbeam electron diffraction (CBED) and the finite element method (FEM). CBED results show that the strain magnitude depends negatively on the FSSM thickness, and compressive strain along the length of the FSSM is increased by approximately 0.1% at the end of the FSSM. FEM is used as a supplementary method to CBED for calculating the strain relaxation in three-dimension in the FSSM.

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Measurement of strain in freestanding Si/Si_xN_y membrane by convergent beam electron diffraction and finite element method

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