Measurement of Single-Event Upsets in 65-nm SRAMs under Irradiation of Spallation Neutrons at J-PARC MLF

Junya Kuroda; Seiya Manabe; Yukinobu Watanabe; Kojiro Ito; Wang Liao; Masanori Hashimoto; Shin Ichiro Abe; Masahide Harada; Kenichi Oikawa; Yasuhiro Miyake

doi:10.1109/TNS.2020.2978257

Measurement of Single-Event Upsets in 65-nm SRAMs under Irradiation of Spallation Neutrons at J-PARC MLF

Junya Kuroda, Seiya Manabe, Yukinobu Watanabe, Kojiro Ito, Wang Liao, Masanori Hashimoto, Shin Ichiro Abe, Masahide Harada, Kenichi Oikawa, Yasuhiro Miyake

Engineering Science for Advanced energy system

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A neutron irradiation test of static random access memories (SRAMs) was performed using a spallation neutron source at Materials and Life Science Experimental Facility (MLF) in the Japan Proton Accelerator Research Complex (J-PARC). The probability of neutron-induced single-event upsets (SEUs) was measured for 65-nm bulk and silicon on thin buried oxide (SOTB) SRAMs under neutron irradiation at the BL10 experimental facility. The measured SEU data were compared with the previous data of the same SRAMs which were measured at other irradiation facilities having different neutron spectra. The differences in the operating voltage dependence of the measured SEU probabilities are discussed with particular attention to the impact of irradiation side on SEUs. The particle and heavy ion transport code system (PHITS) simulation based on the simple sensitive volume model qualitatively reproduced the operating voltage dependence seen in the measured ratio of SEUs for the Bulk SRAM between the resin side and board side irradiations under different neutron fields.

Original language	English
Article number	9024135
Pages (from-to)	1599-1605
Number of pages	7
Journal	IEEE Transactions on Nuclear Science
Volume	67
Issue number	7
DOIs	https://doi.org/10.1109/TNS.2020.2978257
Publication status	Published - Jul 2020

All Science Journal Classification (ASJC) codes

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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title = "Measurement of Single-Event Upsets in 65-nm SRAMs under Irradiation of Spallation Neutrons at J-PARC MLF",

abstract = "A neutron irradiation test of static random access memories (SRAMs) was performed using a spallation neutron source at Materials and Life Science Experimental Facility (MLF) in the Japan Proton Accelerator Research Complex (J-PARC). The probability of neutron-induced single-event upsets (SEUs) was measured for 65-nm bulk and silicon on thin buried oxide (SOTB) SRAMs under neutron irradiation at the BL10 experimental facility. The measured SEU data were compared with the previous data of the same SRAMs which were measured at other irradiation facilities having different neutron spectra. The differences in the operating voltage dependence of the measured SEU probabilities are discussed with particular attention to the impact of irradiation side on SEUs. The particle and heavy ion transport code system (PHITS) simulation based on the simple sensitive volume model qualitatively reproduced the operating voltage dependence seen in the measured ratio of SEUs for the Bulk SRAM between the resin side and board side irradiations under different neutron fields.",

author = "Junya Kuroda and Seiya Manabe and Yukinobu Watanabe and Kojiro Ito and Wang Liao and Masanori Hashimoto and Abe, {Shin Ichiro} and Masahide Harada and Kenichi Oikawa and Yasuhiro Miyake",

note = "Funding Information: Manuscript received December 23, 2019; revised February 21, 2020; accepted February 24, 2020. Date of publication March 4, 2020; date of current version July 16, 2020. This research was supported by Program on Open Innovation Platform with Enterprises, Research Institute and Academia, Japan Science and Technology Agency (JST, OPERA, JPMJOP1721). Publisher Copyright: {\textcopyright} 1963-2012 IEEE.",

year = "2020",

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doi = "10.1109/TNS.2020.2978257",

language = "English",

volume = "67",

pages = "1599--1605",

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T1 - Measurement of Single-Event Upsets in 65-nm SRAMs under Irradiation of Spallation Neutrons at J-PARC MLF

AU - Kuroda, Junya

AU - Manabe, Seiya

AU - Watanabe, Yukinobu

AU - Ito, Kojiro

AU - Liao, Wang

AU - Hashimoto, Masanori

AU - Abe, Shin Ichiro

AU - Harada, Masahide

AU - Oikawa, Kenichi

AU - Miyake, Yasuhiro

N1 - Funding Information: Manuscript received December 23, 2019; revised February 21, 2020; accepted February 24, 2020. Date of publication March 4, 2020; date of current version July 16, 2020. This research was supported by Program on Open Innovation Platform with Enterprises, Research Institute and Academia, Japan Science and Technology Agency (JST, OPERA, JPMJOP1721). Publisher Copyright: © 1963-2012 IEEE.

PY - 2020/7

Y1 - 2020/7

N2 - A neutron irradiation test of static random access memories (SRAMs) was performed using a spallation neutron source at Materials and Life Science Experimental Facility (MLF) in the Japan Proton Accelerator Research Complex (J-PARC). The probability of neutron-induced single-event upsets (SEUs) was measured for 65-nm bulk and silicon on thin buried oxide (SOTB) SRAMs under neutron irradiation at the BL10 experimental facility. The measured SEU data were compared with the previous data of the same SRAMs which were measured at other irradiation facilities having different neutron spectra. The differences in the operating voltage dependence of the measured SEU probabilities are discussed with particular attention to the impact of irradiation side on SEUs. The particle and heavy ion transport code system (PHITS) simulation based on the simple sensitive volume model qualitatively reproduced the operating voltage dependence seen in the measured ratio of SEUs for the Bulk SRAM between the resin side and board side irradiations under different neutron fields.

AB - A neutron irradiation test of static random access memories (SRAMs) was performed using a spallation neutron source at Materials and Life Science Experimental Facility (MLF) in the Japan Proton Accelerator Research Complex (J-PARC). The probability of neutron-induced single-event upsets (SEUs) was measured for 65-nm bulk and silicon on thin buried oxide (SOTB) SRAMs under neutron irradiation at the BL10 experimental facility. The measured SEU data were compared with the previous data of the same SRAMs which were measured at other irradiation facilities having different neutron spectra. The differences in the operating voltage dependence of the measured SEU probabilities are discussed with particular attention to the impact of irradiation side on SEUs. The particle and heavy ion transport code system (PHITS) simulation based on the simple sensitive volume model qualitatively reproduced the operating voltage dependence seen in the measured ratio of SEUs for the Bulk SRAM between the resin side and board side irradiations under different neutron fields.

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Measurement of Single-Event Upsets in 65-nm SRAMs under Irradiation of Spallation Neutrons at J-PARC MLF

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