TY - JOUR
T1 - Measurement of Output Signals from an Avalanche Photodiode by Irradiating with X-rays in the Temperature Range from 150mK to 4.2K
AU - Yasumune, Takashi
AU - Masuda, Takuro
AU - Oshima, Yuki
AU - Maehata, Keisuke
AU - Ishibashi, Kenji
AU - Umeno, Takahiro
PY - 2011/7
Y1 - 2011/7
N2 - We measured leakage current and gain characteristics of a reverse-type avalanche photodiode (APD). The leakage current generated below the breakdown voltage was found to be lower than 1 pA at temperatures below 200 K. Avalanche multiplication of the APD was achieved in the temperature range from 150mK to 300 K. To characterize charge carrier properties of the APD, output signal pulses from the APD were observed by irradiating the APD with X-rays in the temperature range from 150mK to 4.2 K. The yield of signal charge was found to abruptly change in the temperature range from 1 to 2 K, where the yield of charge at 1 K is about 50% of that at 2 K.
AB - We measured leakage current and gain characteristics of a reverse-type avalanche photodiode (APD). The leakage current generated below the breakdown voltage was found to be lower than 1 pA at temperatures below 200 K. Avalanche multiplication of the APD was achieved in the temperature range from 150mK to 300 K. To characterize charge carrier properties of the APD, output signal pulses from the APD were observed by irradiating the APD with X-rays in the temperature range from 150mK to 4.2 K. The yield of signal charge was found to abruptly change in the temperature range from 1 to 2 K, where the yield of charge at 1 K is about 50% of that at 2 K.
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U2 - 10.1143/JJAP.50.072201
DO - 10.1143/JJAP.50.072201
M3 - Article
AN - SCOPUS:79960662782
SN - 0021-4922
VL - 50
JO - Japanese journal of applied physics
JF - Japanese journal of applied physics
IS - 7 PART 1
M1 - 072201
ER -