MBE growth of a novel chalcopyrite-type ternary compound MnGeP2

K. Sato, T. Ishibashi, K. Minami, H. Yuasa, J. Jogo, T. Nagatsuka, A. Mizusawa, Y. Kangawa, A. Koukitu

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10 Citations (Scopus)


Novel ternary Mn-containing compound MnGeP2 has been grown on GaAs and InP substrates using molecular beam epitaxy, in which Mn and Ge were supplied from solid sources and P from a gas source. The films obtained showed XRD pattern characteristic of MnGeP2. Lattice constants were determined using reciprocal lattice mapping analysis. Films directly grown on GaAs substrate showed three-dimensional grain-growth. By introduction of a Ge buffer layer growth mode became two-dimensional. The magnetization vs. temperature curve showed ferromagnetic properties at room temperature, in conflict with theory which predicts its antiferromagnetism. Presence of secondary phase is discussed.

Original languageEnglish
Pages (from-to)2030-2035
Number of pages6
JournalJournal of Physics and Chemistry of Solids
Issue number11
Publication statusPublished - Nov 2005
Externally publishedYes

All Science Journal Classification (ASJC) codes

  • General Chemistry
  • General Materials Science
  • Condensed Matter Physics


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