Material design of metal oxide nanowires and their promises

Research output: Chapter in Book/Report/Conference proceedingChapter

1 Citation (Scopus)


Here we describe our recent results as to nanoscale resistive switching phenomena by utilizing single-crystalline metal oxide nanowires. The nanowires are grown via vapor-liquid-solid method. A single nanowire device was fabricated by integrating with top-down lithography techniques. It was found that the use of planer-type nanowire ReRAM devices allows us to examine not only the intrinsic nanoscale resistive switching properties, which have been buried in conventional capacitor devices, but also for designing nanoscale resistive memory devices.

Original languageEnglish
Title of host publicationCorrelated Functional Oxides
Subtitle of host publicationNanocomposites and Heterostructures
PublisherSpringer International Publishing
Number of pages10
ISBN (Electronic)9783319437798
ISBN (Print)9783319437774
Publication statusPublished - Jan 1 2016

All Science Journal Classification (ASJC) codes

  • General Engineering
  • General Materials Science
  • General Physics and Astronomy


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