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Low thermal budget fabrication of poly-Ge1-xSnx thin film thermoelectric generator

  • Kouta Takahashi
  • , Hiroshi Ikenoue
  • , Mitsuo Sakashita
  • , Osamu Nakatsuka
  • , Shigeaki Zaima
  • , Masashi Kurosawa

    Research output: Chapter in Book/Report/Conference proceedingConference contribution

    Abstract

    We have investigated thermoelectric (TE) properties of poly-Ge1-xSnx layers prepared with pulsed laser annealing in water. Even for polycrystalline layers, relatively high power factors of 0.37 and 0.92 mWK-2m-1 were obtained for p- and n-type poly-Ge1-xSnx layers, respectively. The Ge1-xSnx-based TE generator has been firstly fabricated blow the process temperature of 300 °C.

    Original languageEnglish
    Title of host publication2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
    PublisherInstitute of Electrical and Electronics Engineers Inc.
    Pages313-315
    Number of pages3
    ISBN (Print)9781538637111
    DOIs
    Publication statusPublished - Jul 26 2018
    Event2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan
    Duration: Mar 13 2018Mar 16 2018

    Publication series

    Name2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

    Other

    Other2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
    Country/TerritoryJapan
    CityKobe
    Period3/13/183/16/18

    All Science Journal Classification (ASJC) codes

    • Electrical and Electronic Engineering
    • Industrial and Manufacturing Engineering
    • Electronic, Optical and Magnetic Materials

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