Low thermal budget fabrication of poly-Ge1-xSnx thin film thermoelectric generator

Kouta Takahashi; Hiroshi Ikenoue; Mitsuo Sakashita; Osamu Nakatsuka; Shigeaki Zaima; Masashi Kurosawa

doi:10.1109/EDTM.2018.8421488

Low thermal budget fabrication of poly-Ge_1-xSn_x thin film thermoelectric generator

Kouta Takahashi, Hiroshi Ikenoue, Mitsuo Sakashita, Osamu Nakatsuka, Shigeaki Zaima, Masashi Kurosawa

Department of Gigaphoton Next GLP

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

We have investigated thermoelectric (TE) properties of poly-Ge1-xSnx layers prepared with pulsed laser annealing in water. Even for polycrystalline layers, relatively high power factors of 0.37 and 0.92 mWK^-2m^-1 were obtained for p- and n-type poly-Ge1-xSnx layers, respectively. The Ge1-xSnx-based TE generator has been firstly fabricated blow the process temperature of 300 °C.

Original language	English
Title of host publication	2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	313-315
Number of pages	3
ISBN (Print)	9781538637111
DOIs	https://doi.org/10.1109/EDTM.2018.8421488
Publication status	Published - Jul 26 2018
Event	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Kobe, Japan Duration: Mar 13 2018 → Mar 16 2018

Publication series

Name	2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

Other

Other	2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018
Country/Territory	Japan
City	Kobe
Period	3/13/18 → 3/16/18

All Science Journal Classification (ASJC) codes

Electrical and Electronic Engineering
Industrial and Manufacturing Engineering
Electronic, Optical and Magnetic Materials

Access to Document

10.1109/EDTM.2018.8421488

Cite this

Takahashi, K., Ikenoue, H., Sakashita, M., Nakatsuka, O., Zaima, S., & Kurosawa, M. (2018). Low thermal budget fabrication of poly-Ge_1-xSn_x thin film thermoelectric generator. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings (pp. 313-315). Article 8421488 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/EDTM.2018.8421488

Low thermal budget fabrication of poly-Ge_1-xSn_x thin film thermoelectric generator. / Takahashi, Kouta; Ikenoue, Hiroshi; Sakashita, Mitsuo et al.
2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. p. 313-315 8421488 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Takahashi, K, Ikenoue, H, Sakashita, M, Nakatsuka, O, Zaima, S & Kurosawa, M 2018, Low thermal budget fabrication of poly-Ge_1-xSn_x thin film thermoelectric generator. in 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings., 8421488, 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings, Institute of Electrical and Electronics Engineers Inc., pp. 313-315, 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018, Kobe, Japan, 3/13/18. https://doi.org/10.1109/EDTM.2018.8421488

Takahashi K, Ikenoue H, Sakashita M, Nakatsuka O, Zaima S, Kurosawa M. Low thermal budget fabrication of poly-Ge_1-xSn_x thin film thermoelectric generator. In 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2018. p. 313-315. 8421488. (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings). doi: 10.1109/EDTM.2018.8421488

Takahashi, Kouta ; Ikenoue, Hiroshi ; Sakashita, Mitsuo et al. / Low thermal budget fabrication of poly-Ge_1-xSn_x thin film thermoelectric generator. 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 313-315 (2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings).

@inproceedings{f83c9af6d6204e619ae03036419cc244,

title = "Low thermal budget fabrication of poly-Ge1-xSnx thin film thermoelectric generator",

abstract = "We have investigated thermoelectric (TE) properties of poly-Ge1-xSnx layers prepared with pulsed laser annealing in water. Even for polycrystalline layers, relatively high power factors of 0.37 and 0.92 mWK-2m-1 were obtained for p- and n-type poly-Ge1-xSnx layers, respectively. The Ge1-xSnx-based TE generator has been firstly fabricated blow the process temperature of 300 °C.",

author = "Kouta Takahashi and Hiroshi Ikenoue and Mitsuo Sakashita and Osamu Nakatsuka and Shigeaki Zaima and Masashi Kurosawa",

note = "Funding Information: We wish to thank Gigaphoton Inc. for providing the KrF excimer laser under collaborative work with the Dept. of Gigaphoton Next GLP at Kyushu Univ.. This work was partly supported by Grants-in-Aid for Scientific Research (S) (Grant No. 26220605) and oY ung Scientists (A) (Grant No. 17H04919) from the JSPS and PRESTO (Grant No. JPMJPR15R2) from the JST in Japan. Publisher Copyright: {\textcopyright} 2018 IEEE.; 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 ; Conference date: 13-03-2018 Through 16-03-2018",

year = "2018",

month = jul,

day = "26",

doi = "10.1109/EDTM.2018.8421488",

language = "English",

isbn = "9781538637111",

series = "2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

pages = "313--315",

booktitle = "2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings",

address = "United States",

}

TY - GEN

T1 - Low thermal budget fabrication of poly-Ge1-xSnx thin film thermoelectric generator

AU - Takahashi, Kouta

AU - Ikenoue, Hiroshi

AU - Sakashita, Mitsuo

AU - Nakatsuka, Osamu

AU - Zaima, Shigeaki

AU - Kurosawa, Masashi

N1 - Funding Information: We wish to thank Gigaphoton Inc. for providing the KrF excimer laser under collaborative work with the Dept. of Gigaphoton Next GLP at Kyushu Univ.. This work was partly supported by Grants-in-Aid for Scientific Research (S) (Grant No. 26220605) and oY ung Scientists (A) (Grant No. 17H04919) from the JSPS and PRESTO (Grant No. JPMJPR15R2) from the JST in Japan. Publisher Copyright: © 2018 IEEE.

PY - 2018/7/26

Y1 - 2018/7/26

N2 - We have investigated thermoelectric (TE) properties of poly-Ge1-xSnx layers prepared with pulsed laser annealing in water. Even for polycrystalline layers, relatively high power factors of 0.37 and 0.92 mWK-2m-1 were obtained for p- and n-type poly-Ge1-xSnx layers, respectively. The Ge1-xSnx-based TE generator has been firstly fabricated blow the process temperature of 300 °C.

AB - We have investigated thermoelectric (TE) properties of poly-Ge1-xSnx layers prepared with pulsed laser annealing in water. Even for polycrystalline layers, relatively high power factors of 0.37 and 0.92 mWK-2m-1 were obtained for p- and n-type poly-Ge1-xSnx layers, respectively. The Ge1-xSnx-based TE generator has been firstly fabricated blow the process temperature of 300 °C.

UR - http://www.scopus.com/inward/record.url?scp=85051560239&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85051560239&partnerID=8YFLogxK

U2 - 10.1109/EDTM.2018.8421488

DO - 10.1109/EDTM.2018.8421488

M3 - Conference contribution

AN - SCOPUS:85051560239

SN - 9781538637111

T3 - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

SP - 313

EP - 315

BT - 2018 IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018 - Proceedings

PB - Institute of Electrical and Electronics Engineers Inc.

T2 - 2nd IEEE Electron Devices Technology and Manufacturing Conference, EDTM 2018

Y2 - 13 March 2018 through 16 March 2018

ER -