Low temperature synthesis of β-FeSi2 thin films by pulsed laser deposition

T. Yoshitake; T. Nagamoto; K. Nagayama

doi:10.1023/A:1006671009577

Low temperature synthesis of β-FeSi₂ thin films by pulsed laser deposition

T. Yoshitake, T. Nagamoto, K. Nagayama

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

In this study, the β-FeSi₂ phase was successfully grown using a PLD method. Phase growth was realized by the adatom energy due to the high energetic species such as excited Fe atoms and excited Si ones.

Original language	English
Pages (from-to)	1755-1756
Number of pages	2
Journal	Journal of Materials Science Letters
Volume	18
Issue number	21
DOIs	https://doi.org/10.1023/A:1006671009577
Publication status	Published - Nov 1 1999

All Science Journal Classification (ASJC) codes

Materials Science(all)

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10.1023/A:1006671009577

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title = "Low temperature synthesis of β-FeSi2 thin films by pulsed laser deposition",

abstract = "In this study, the β-FeSi2 phase was successfully grown using a PLD method. Phase growth was realized by the adatom energy due to the high energetic species such as excited Fe atoms and excited Si ones.",

author = "T. Yoshitake and T. Nagamoto and K. Nagayama",

note = "Funding Information: The authors wish to thank Dr. Y. Maeda of Osaka Prefecture University for helpful discussion. This work is supported by Fukuoka Industry, Science and Technology Foundation.",

year = "1999",

month = nov,

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doi = "10.1023/A:1006671009577",

language = "English",

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journal = "Journal of Materials Science Letters",

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publisher = "Chapman & Hall",

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T1 - Low temperature synthesis of β-FeSi2 thin films by pulsed laser deposition

AU - Yoshitake, T.

AU - Nagamoto, T.

AU - Nagayama, K.

N1 - Funding Information: The authors wish to thank Dr. Y. Maeda of Osaka Prefecture University for helpful discussion. This work is supported by Fukuoka Industry, Science and Technology Foundation.

PY - 1999/11/1

Y1 - 1999/11/1

N2 - In this study, the β-FeSi2 phase was successfully grown using a PLD method. Phase growth was realized by the adatom energy due to the high energetic species such as excited Fe atoms and excited Si ones.

AB - In this study, the β-FeSi2 phase was successfully grown using a PLD method. Phase growth was realized by the adatom energy due to the high energetic species such as excited Fe atoms and excited Si ones.

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DO - 10.1023/A:1006671009577

M3 - Article

AN - SCOPUS:0033225797

SN - 0261-8028

VL - 18

SP - 1755

EP - 1756

JO - Journal of Materials Science Letters

JF - Journal of Materials Science Letters

IS - 21

ER -

Low temperature synthesis of β-FeSi₂ thin films by pulsed laser deposition

Abstract

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