Low-temperature solid-phase crystallization of a-Si1-xGex on SiO2 by ion-beam stimulation

Isao Tsunoda, Tomohiro Nagata, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)


Effects of Si-Si bond-modulation on solid-phase crystallization of amorphous SiGe on SiO2 have been investigated. The results showed that the annealing temperature required to crystal nucleation significantly decreased to 400 °C by using both Ge doping and ion irradiation (25 keV, 1 × 1016 cm-2. In addition, preferential growth along both (111) and (220) direction was confirmed by using X-ray diffraction (XRD) method. In this way, this bond modulation method will be a powerful tool to fabricate high-quality and low-cost poly-Si thin-film transistors on glass substrates.

Original languageEnglish
Pages (from-to)336-340
Number of pages5
JournalMaterials Science and Engineering: B
Issue number1-3
Publication statusPublished - Feb 14 2002

All Science Journal Classification (ASJC) codes

  • General Materials Science
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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