Low-temperature oxidation of 4H-SiC using oxidation catalyst SrTi1-xMgxO3-δ

Li Li; Akihiro Ikeda; Tanemasa Asano

doi:10.7567/JJAP.55.108001

Low-temperature oxidation of 4H-SiC using oxidation catalyst SrTi_1-xMgxO_3-δ

Li Li, Akihiro Ikeda, Tanemasa Asano

Integrated Electronic Systems

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

A thermal oxidation method with SrTi_1-xMgxO_3-δ used as an oxidation catalyst is proposed to oxidize the 4H-SiC surface at low temperatures. The rate constant for the interfacial reaction of the 4H-SiC(0001) Si-face at 800 C is enhanced by approximately two orders of magnitude from that of conventional dry oxidation. The method enables the production of a gate SiO₂ layer of a MOSFET at temperatures below 900 C. Electrical characterization of the MOS interface suggests that the catalytic oxidation produces similar interface state densities to those produced by conventional dry oxidation in the energy range of 0.2-0.5 eV from the conduction band edge at 1300 C.

Original language	English
Article number	108001
Journal	Japanese journal of applied physics
Volume	55
Issue number	10
DOIs	https://doi.org/10.7567/JJAP.55.108001
Publication status	Published - Oct 2016

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

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10.7567/JJAP.55.108001

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@article{d8614b89df2649ea92cf916675828be9,

title = "Low-temperature oxidation of 4H-SiC using oxidation catalyst SrTi1-xMgxO3-δ",

abstract = "A thermal oxidation method with SrTi1-xMgxO3-δ used as an oxidation catalyst is proposed to oxidize the 4H-SiC surface at low temperatures. The rate constant for the interfacial reaction of the 4H-SiC(0001) Si-face at 800 C is enhanced by approximately two orders of magnitude from that of conventional dry oxidation. The method enables the production of a gate SiO2 layer of a MOSFET at temperatures below 900 C. Electrical characterization of the MOS interface suggests that the catalytic oxidation produces similar interface state densities to those produced by conventional dry oxidation in the energy range of 0.2-0.5 eV from the conduction band edge at 1300 C.",

author = "Li Li and Akihiro Ikeda and Tanemasa Asano",

note = "Funding Information: Acknowledgments The authors are grateful to Professor Xiao-Hong Li of The University of Kitakyushu for her discussion on the oxidation catalyst. This work is supported in part by JSPS KAKENHI Grant Number 16K14258. Publisher Copyright: {\textcopyright} 2016 The Japan Society of Applied Physics.",

year = "2016",

month = oct,

doi = "10.7567/JJAP.55.108001",

language = "English",

volume = "55",

journal = "Japanese journal of applied physics",

issn = "0021-4922",

publisher = "The Japan Society of Applied Physics",

number = "10",

}

TY - JOUR

T1 - Low-temperature oxidation of 4H-SiC using oxidation catalyst SrTi1-xMgxO3-δ

AU - Li, Li

AU - Ikeda, Akihiro

AU - Asano, Tanemasa

N1 - Funding Information: Acknowledgments The authors are grateful to Professor Xiao-Hong Li of The University of Kitakyushu for her discussion on the oxidation catalyst. This work is supported in part by JSPS KAKENHI Grant Number 16K14258. Publisher Copyright: © 2016 The Japan Society of Applied Physics.

PY - 2016/10

Y1 - 2016/10

N2 - A thermal oxidation method with SrTi1-xMgxO3-δ used as an oxidation catalyst is proposed to oxidize the 4H-SiC surface at low temperatures. The rate constant for the interfacial reaction of the 4H-SiC(0001) Si-face at 800 C is enhanced by approximately two orders of magnitude from that of conventional dry oxidation. The method enables the production of a gate SiO2 layer of a MOSFET at temperatures below 900 C. Electrical characterization of the MOS interface suggests that the catalytic oxidation produces similar interface state densities to those produced by conventional dry oxidation in the energy range of 0.2-0.5 eV from the conduction band edge at 1300 C.

AB - A thermal oxidation method with SrTi1-xMgxO3-δ used as an oxidation catalyst is proposed to oxidize the 4H-SiC surface at low temperatures. The rate constant for the interfacial reaction of the 4H-SiC(0001) Si-face at 800 C is enhanced by approximately two orders of magnitude from that of conventional dry oxidation. The method enables the production of a gate SiO2 layer of a MOSFET at temperatures below 900 C. Electrical characterization of the MOS interface suggests that the catalytic oxidation produces similar interface state densities to those produced by conventional dry oxidation in the energy range of 0.2-0.5 eV from the conduction band edge at 1300 C.

UR - http://www.scopus.com/inward/record.url?scp=84989339148&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84989339148&partnerID=8YFLogxK

U2 - 10.7567/JJAP.55.108001

DO - 10.7567/JJAP.55.108001

M3 - Article

AN - SCOPUS:84989339148

SN - 0021-4922

VL - 55

JO - Japanese journal of applied physics

JF - Japanese journal of applied physics

IS - 10

M1 - 108001

ER -

Low-temperature oxidation of 4H-SiC using oxidation catalyst SrTi_1-xMgxO_3-δ

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