TY - GEN
T1 - Low-temperature, high-concentration laser doping of 4H-SiC for low contact resistance
AU - Kikuchi, T.
AU - Imokawa, K.
AU - Ikeda, A.
AU - Nakamura, D.
AU - Asano, T.
AU - Ikenoue, H.
N1 - Publisher Copyright:
© COPYRIGHT SPIE. Downloading of the abstract is permitted for personal use only.
PY - 2019
Y1 - 2019
N2 - We propose low-temperature and high-concentration doping of 4H-silicon carbide (4H-SiC)(0001) by KrF excimer laser irradiation of source films on a 4H-SiC substrate, in which a dopant atom is included. In n-type doping, a SiNx film with a thickness of 100 nm was deposited on an n-type 4H-SiC(0001) substrate by chemical vapor deposition. A gas supply nozzle for ambient environment control was installed to prevent oxidation of the SiC surface. High-concentration nitrogen doping (∼1 × 1021/cm3 at the surface) was achieved by laser ablation of the SiNx film. Al/Ti electrodes were formed on the doped area at a room temperature, and a contact resistance of 2.2 × 10-5 Ωi1/2ycm2 was obtained, which is sufficiently small for the backside contact resistance of Schottky barrier diodes. In p-type doping, an Al film with a thickness of 240 nm was deposited on a 4H-SiC substrate by sputtering deposition. After laser irradiation of the Al film in ambient Ar, high-concentration Al doping (∼1 × 1021/cm3 at the surface) was achieved. Al/Ti electrodes were formed on the doped area at a low temperature of 600 °C, and a contact resistance 1.9 × 10-4 Ωi1/2ycm2 was obtained. We conclude that low-temperature and high-concentration doping of 4H-SiC for low contact resistance can be achieved by laser ablation of the source films on the 4H-SiC substrate.
AB - We propose low-temperature and high-concentration doping of 4H-silicon carbide (4H-SiC)(0001) by KrF excimer laser irradiation of source films on a 4H-SiC substrate, in which a dopant atom is included. In n-type doping, a SiNx film with a thickness of 100 nm was deposited on an n-type 4H-SiC(0001) substrate by chemical vapor deposition. A gas supply nozzle for ambient environment control was installed to prevent oxidation of the SiC surface. High-concentration nitrogen doping (∼1 × 1021/cm3 at the surface) was achieved by laser ablation of the SiNx film. Al/Ti electrodes were formed on the doped area at a room temperature, and a contact resistance of 2.2 × 10-5 Ωi1/2ycm2 was obtained, which is sufficiently small for the backside contact resistance of Schottky barrier diodes. In p-type doping, an Al film with a thickness of 240 nm was deposited on a 4H-SiC substrate by sputtering deposition. After laser irradiation of the Al film in ambient Ar, high-concentration Al doping (∼1 × 1021/cm3 at the surface) was achieved. Al/Ti electrodes were formed on the doped area at a low temperature of 600 °C, and a contact resistance 1.9 × 10-4 Ωi1/2ycm2 was obtained. We conclude that low-temperature and high-concentration doping of 4H-SiC for low contact resistance can be achieved by laser ablation of the source films on the 4H-SiC substrate.
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U2 - 10.1117/12.2509191
DO - 10.1117/12.2509191
M3 - Conference contribution
AN - SCOPUS:85068006563
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIV
A2 - Makimura, Tetsuya
A2 - Raciukaitis, Gediminas
A2 - Molpeceres, Carlos
PB - SPIE
T2 - Laser Applications in Microelectronic and Optoelectronic Manufacturing (LAMOM) XXIV 2019
Y2 - 4 February 2019 through 6 February 2019
ER -