Low-temperature growth of orientation-controlled large-grain Ge-rich SiGe on insulator at controlled-position for flexible electronics

T. Sadoh; R. Aoki; T. Tanaka; J. H. Park; M. Miyao

doi:10.1149/07510.0095ecst

Low-temperature growth of orientation-controlled large-grain Ge-rich SiGe on insulator at controlled-position for flexible electronics

T. Sadoh, R. Aoki, T. Tanaka, J. H. Park, M. Miyao

Electronic Devices

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

A technique for low-temperature (≤300°C) formation of largegrain (≥10 μm) Ge-rich SiGe crystals on insulator, whose orientation and position are controlled, should be developed to realize flexible electronics. To achieve this, the gold-induced layerexchange crystallization technique using a-SiGe/Au stacked structures has been investigated. By introduction of diffusion control layers into the a-SiGe/Au interface, (111)-oriented largegrain Ge-rich SiGe crystals are achieved on insulating substrates at low temperatures (≤300°C). Moreover, position control of largegrain crystals becomes possible by patterning the diffusion control layers. This low-temperature growth technique is expected to be useful to realize flexible electronics.

Original language	English
Title of host publication	Thin Film Transistors 13, TFT 13
Editors	Y. Kuo
Publisher	Electrochemical Society Inc.
Pages	95-103
Number of pages	9
Edition	10
ISBN (Electronic)	9781607687276, 9781607687672, 9781607687689, 9781607687696, 9781607687702, 9781607687719, 9781607687726, 9781607687733, 9781607687740, 9781607687757, 9781607687771, 9781607687788, 9781607687795, 9781607687801, 9781607687818, 9781607687825, 9781607687832, 9781607687849, 9781607687856, 9781607687863, 9781607687887, 9781607687894, 9781607687900, 9781607687917, 9781607687924, 9781607687931, 9781607687948, 9781607687955, 9781607687962, 9781607687979, 9781607687986, 9781607687993, 9781607688006, 9781607688013, 9781607688020, 9781607688037
DOIs	https://doi.org/10.1149/07510.0095ecst
Publication status	Published - 2016
Event	Symposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting - Honolulu, United States Duration: Oct 2 2016 → Oct 7 2016

Publication series

Name	ECS Transactions
Number	10
Volume	75
ISSN (Print)	1938-6737
ISSN (Electronic)	1938-5862

Other

Other	Symposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting
Country/Territory	United States
City	Honolulu
Period	10/2/16 → 10/7/16

All Science Journal Classification (ASJC) codes

Engineering(all)

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10.1149/07510.0095ecst

Cite this

Sadoh, T., Aoki, R., Tanaka, T., Park, J. H., & Miyao, M. (2016). Low-temperature growth of orientation-controlled large-grain Ge-rich SiGe on insulator at controlled-position for flexible electronics. In Y. Kuo (Ed.), Thin Film Transistors 13, TFT 13 (10 ed., pp. 95-103). (ECS Transactions; Vol. 75, No. 10). Electrochemical Society Inc.. https://doi.org/10.1149/07510.0095ecst

Low-temperature growth of orientation-controlled large-grain Ge-rich SiGe on insulator at controlled-position for flexible electronics. / Sadoh, T.; Aoki, R.; Tanaka, T. et al.
Thin Film Transistors 13, TFT 13. ed. / Y. Kuo. 10. ed. Electrochemical Society Inc., 2016. p. 95-103 (ECS Transactions; Vol. 75, No. 10).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sadoh, T, Aoki, R, Tanaka, T, Park, JH & Miyao, M 2016, Low-temperature growth of orientation-controlled large-grain Ge-rich SiGe on insulator at controlled-position for flexible electronics. in Y Kuo (ed.), Thin Film Transistors 13, TFT 13. 10 edn, ECS Transactions, no. 10, vol. 75, Electrochemical Society Inc., pp. 95-103, Symposium on Thin Film Transistors 13, TFT 2016 - PRiME 2016/230th ECS Meeting, Honolulu, United States, 10/2/16. https://doi.org/10.1149/07510.0095ecst

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abstract = "A technique for low-temperature (≤300°C) formation of largegrain (≥10 μm) Ge-rich SiGe crystals on insulator, whose orientation and position are controlled, should be developed to realize flexible electronics. To achieve this, the gold-induced layerexchange crystallization technique using a-SiGe/Au stacked structures has been investigated. By introduction of diffusion control layers into the a-SiGe/Au interface, (111)-oriented largegrain Ge-rich SiGe crystals are achieved on insulating substrates at low temperatures (≤300°C). Moreover, position control of largegrain crystals becomes possible by patterning the diffusion control layers. This low-temperature growth technique is expected to be useful to realize flexible electronics.",

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Low-temperature growth of orientation-controlled large-grain Ge-rich SiGe on insulator at controlled-position for flexible electronics

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