Low temperature growth of epitaxial (Ba,Sr)TiO3 thin film by sputter molecular beam epitaxy method

Atsushi Horiguchi; Yukio Watanabe

Low temperature growth of epitaxial (Ba,Sr)TiO₃ thin film by sputter molecular beam epitaxy method

Atsushi Horiguchi, Yukio Watanabe

Research output: Contribution to journal › Article › peer-review

Abstract

A novel sputtering method that can be regarded as a new version of the molecular beam epitaxy (MBE) method is proposed. Epitaxial (Ba,Sr)TiO₃ films are grown at a pressure below 6 × 10^-4Torr at a large target-substrate distance of 24 cm. The highest temperature in all the deposition process including the in-situ post annealing is 350°C. Additionally, a very smooth surface is confirmed by an atomic force microscopy.

Original language	English
Pages (from-to)	5314-5316
Number of pages	3
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	38
Issue number	9 B
Publication status	Published - Dec 1 1999
Externally published	Yes

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Cite this

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abstract = "A novel sputtering method that can be regarded as a new version of the molecular beam epitaxy (MBE) method is proposed. Epitaxial (Ba,Sr)TiO3 films are grown at a pressure below 6 × 10-4Torr at a large target-substrate distance of 24 cm. The highest temperature in all the deposition process including the in-situ post annealing is 350°C. Additionally, a very smooth surface is confirmed by an atomic force microscopy.",

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N2 - A novel sputtering method that can be regarded as a new version of the molecular beam epitaxy (MBE) method is proposed. Epitaxial (Ba,Sr)TiO3 films are grown at a pressure below 6 × 10-4Torr at a large target-substrate distance of 24 cm. The highest temperature in all the deposition process including the in-situ post annealing is 350°C. Additionally, a very smooth surface is confirmed by an atomic force microscopy.

AB - A novel sputtering method that can be regarded as a new version of the molecular beam epitaxy (MBE) method is proposed. Epitaxial (Ba,Sr)TiO3 films are grown at a pressure below 6 × 10-4Torr at a large target-substrate distance of 24 cm. The highest temperature in all the deposition process including the in-situ post annealing is 350°C. Additionally, a very smooth surface is confirmed by an atomic force microscopy.

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ER -

Low temperature growth of epitaxial (Ba,Sr)TiO₃ thin film by sputter molecular beam epitaxy method

Abstract

All Science Journal Classification (ASJC) codes

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