Low-Temperature Formation of Poly-Si_<1-x>Ge_x (x:0-1) on SiO_2 by Au-Mediated Lateral Crystallization

Hiroshi Kanno, Tomohisa Aoki, Atsushi Kenjo, Taizoh Sadoh, Masanobu Miyao

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	516-517
Number of pages	2
Journal	Extended abstracts of the ... Conference on Solid State Devices and Materials
Volume	2004
Publication status	Published - Sept 15 2004

Cite this

@article{f686e7e957d241d4a2db6433ecb7ca6b,

title = "Low-Temperature Formation of Poly-Si_<1-x>Ge_x (x:0-1) on SiO_2 by Au-Mediated Lateral Crystallization",

author = "Hiroshi Kanno and Tomohisa Aoki and Atsushi Kenjo and Taizoh Sadoh and Masanobu Miyao",

year = "2004",

month = sep,

day = "15",

language = "English",

volume = "2004",

pages = "516--517",

journal = "Extended abstracts of the ... Conference on Solid State Devices and Materials",

}

TY - JOUR

T1 - Low-Temperature Formation of Poly-Si_<1-x>Ge_x (x:0-1) on SiO_2 by Au-Mediated Lateral Crystallization

AU - Kanno, Hiroshi

AU - Aoki, Tomohisa

AU - Kenjo, Atsushi

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

PY - 2004/9/15

Y1 - 2004/9/15

UR - https://ci.nii.ac.jp/naid/10022539215

M3 - Article

VL - 2004

SP - 516

EP - 517

JO - Extended abstracts of the ... Conference on Solid State Devices and Materials

JF - Extended abstracts of the ... Conference on Solid State Devices and Materials

ER -