Low-Temperature Formation of Ohmic Contact for Si TFT Fabrication by Excimer Laser Doping with Phosphoric Acid Coating (シリコン材料・デバイス)

Kaname Imokawa, Nozomu Tanaka, Akira Suwa, Daisuke Nakamura, Taizoh Sadoh, Tetsuya Goto, Hiroshi Ikenoue

Research output: Contribution to journalArticlepeer-review

Original languageEnglish
Pages (from-to)11-14
Number of pages4
JournalIEICE technical report
Issue number241
Publication statusPublished - Oct 17 2018

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