Low temperature epitaxial growth of full heusler alloy Fe2MnSi on Ge(111) substrates for spintronics application

Koji Ueda; Yuichiro Ando; Kenji Yamamoto; Mamoru Kumano; Kohei Hamaya; Taizoh Sadoh; Kazumasa Nammi; Yoshihito Maeda; Masanobu Miyao

doi:10.1149/1.2986782

Low temperature epitaxial growth of full heusler alloy Fe₂MnSi on Ge(111) substrates for spintronics application

Koji Ueda, Yuichiro Ando, Kenji Yamamoto, Mamoru Kumano, Kohei Hamaya, Taizoh Sadoh, Kazumasa Nammi, Yoshihito Maeda, Masanobu Miyao

Electronic Devices

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Low temperature epitaxial growth of the full Heusler alloy Fe ₂MnSi layers on Ge(l 11) substrates has been investigated. RBS measurements revealed that good crystallinity of Fe₂MnSi layers was realized at 200°C. In addition, a TEM image of a Fe₂MnSi layer grown at 200°C demonstrated a very sharp interface. Moreover, identical symmetrical structures of electron diffraction patterns were obtained from the Fe₂MnSi layer and the Ge substrate, which confirmed formation of a single crystalline epitaxial Fe₂MnSi layer on Ge. These results will be very attractive for Si-based spintronics applications.

Original language	English
Title of host publication	ECS Transactions - SiGe, Ge, and Related Compounds 3
Subtitle of host publication	Materials, Processing, and Devices
Publisher	Electrochemical Society Inc.
Pages	273-276
Number of pages	4
Edition	10
ISBN (Print)	9781566776561
DOIs	https://doi.org/10.1149/1.2986782
Publication status	Published - 2009
Event	3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting - Honolulu, HI, United States Duration: Oct 12 2008 → Oct 17 2008

Publication series

Name	ECS Transactions
Number	10
Volume	16
ISSN (Print)	1938-5862
ISSN (Electronic)	1938-6737

Other

Other	3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting
Country/Territory	United States
City	Honolulu, HI
Period	10/12/08 → 10/17/08

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1149/1.2986782

Cite this

Ueda, K., Ando, Y., Yamamoto, K., Kumano, M., Hamaya, K., Sadoh, T., Nammi, K., Maeda, Y., & Miyao, M. (2009). Low temperature epitaxial growth of full heusler alloy Fe₂MnSi on Ge(111) substrates for spintronics application. In ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices (10 ed., pp. 273-276). (ECS Transactions; Vol. 16, No. 10). Electrochemical Society Inc.. https://doi.org/10.1149/1.2986782

Low temperature epitaxial growth of full heusler alloy Fe₂MnSi on Ge(111) substrates for spintronics application. / Ueda, Koji; Ando, Yuichiro; Yamamoto, Kenji et al.
ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices. 10. ed. Electrochemical Society Inc., 2009. p. 273-276 (ECS Transactions; Vol. 16, No. 10).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ueda, K, Ando, Y, Yamamoto, K, Kumano, M, Hamaya, K, Sadoh, T, Nammi, K, Maeda, Y & Miyao, M 2009, Low temperature epitaxial growth of full heusler alloy Fe₂MnSi on Ge(111) substrates for spintronics application. in ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices. 10 edn, ECS Transactions, no. 10, vol. 16, Electrochemical Society Inc., pp. 273-276, 3rd SiGe, Ge, and Related Compounds: Materials, Processing and Devices Symposium - 214th ECS Meeting, Honolulu, HI, United States, 10/12/08. https://doi.org/10.1149/1.2986782

Ueda K, Ando Y, Yamamoto K, Kumano M, Hamaya K, Sadoh T et al. Low temperature epitaxial growth of full heusler alloy Fe₂MnSi on Ge(111) substrates for spintronics application. In ECS Transactions - SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices. 10 ed. Electrochemical Society Inc. 2009. p. 273-276. (ECS Transactions; 10). doi: 10.1149/1.2986782

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abstract = "Low temperature epitaxial growth of the full Heusler alloy Fe 2MnSi layers on Ge(l 11) substrates has been investigated. RBS measurements revealed that good crystallinity of Fe2MnSi layers was realized at 200°C. In addition, a TEM image of a Fe2MnSi layer grown at 200°C demonstrated a very sharp interface. Moreover, identical symmetrical structures of electron diffraction patterns were obtained from the Fe2MnSi layer and the Ge substrate, which confirmed formation of a single crystalline epitaxial Fe2MnSi layer on Ge. These results will be very attractive for Si-based spintronics applications.",

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AU - Hamaya, Kohei

AU - Sadoh, Taizoh

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AB - Low temperature epitaxial growth of the full Heusler alloy Fe 2MnSi layers on Ge(l 11) substrates has been investigated. RBS measurements revealed that good crystallinity of Fe2MnSi layers was realized at 200°C. In addition, a TEM image of a Fe2MnSi layer grown at 200°C demonstrated a very sharp interface. Moreover, identical symmetrical structures of electron diffraction patterns were obtained from the Fe2MnSi layer and the Ge substrate, which confirmed formation of a single crystalline epitaxial Fe2MnSi layer on Ge. These results will be very attractive for Si-based spintronics applications.

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