TY - JOUR
T1 - Low-temperature crystallization of amorphous silicon and amorphous germanium by soft X-ray irradiation
AU - Heya, Akira
AU - Kanda, Kazuhiro
AU - Toko, Kaoru
AU - Sadoh, Taizoh
AU - Amano, Sho
AU - Matsuo, Naoto
AU - Miyamoto, Shuji
AU - Miyao, Masanobu
AU - Mochizuki, Takayasu
N1 - Funding Information:
This work was supported in part by a Grant-in-Aid for Scientific Research C (19560667) from the Ministry of Education, Culture, Sports, Science and Technology of Japan.
PY - 2013/5/1
Y1 - 2013/5/1
N2 - The low-temperature-crystallization effects of soft X-ray irradiation on the structural properties of amorphous Si and amorphous Ge films were investigated. From the differences in crystallization between Si and Ge, it was found that the effects of soft X-ray irradiation on the crystallization strongly depended on the energy band gap and energy level. The crystallization temperatures of the amorphous Si and amorphous Ge films decreased from 953 K to 853 K and 773 K to 663 K, respectively. The decrease in crystallization temperature was also related to atoms transitioning into a quasi-nucleic phase in the films. The ratio of electron excitation and migration effects to thermal effects was controlled using the storage-ring current (photon flux density). Therefore, we believe that low-temperature crystallization can be realized by controlling atomic migration through electron excitation.
AB - The low-temperature-crystallization effects of soft X-ray irradiation on the structural properties of amorphous Si and amorphous Ge films were investigated. From the differences in crystallization between Si and Ge, it was found that the effects of soft X-ray irradiation on the crystallization strongly depended on the energy band gap and energy level. The crystallization temperatures of the amorphous Si and amorphous Ge films decreased from 953 K to 853 K and 773 K to 663 K, respectively. The decrease in crystallization temperature was also related to atoms transitioning into a quasi-nucleic phase in the films. The ratio of electron excitation and migration effects to thermal effects was controlled using the storage-ring current (photon flux density). Therefore, we believe that low-temperature crystallization can be realized by controlling atomic migration through electron excitation.
UR - http://www.scopus.com/inward/record.url?scp=84876667623&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84876667623&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2013.02.129
DO - 10.1016/j.tsf.2013.02.129
M3 - Article
AN - SCOPUS:84876667623
SN - 0040-6090
VL - 534
SP - 334
EP - 340
JO - Thin Solid Films
JF - Thin Solid Films
ER -