TY - GEN
T1 - Low-temperature bonding of LSI chips to PEN film using Au cone bump for heterogeneous integration
AU - Shuto, Takanori
AU - Watanabe, Naoya
AU - Ikeda, Akihiro
AU - Asano, Tanemasa
PY - 2011
Y1 - 2011
N2 - We show that interconnection bonding of LSI chip to metallization on polyethylene naphthalate) (PEN) film can be realized by using cone-shaped compliant bump. We have investigated two designs of the counter electrode. One is simple metal pad electrode and the other is an electrode in which cross-shaped slit was formed. The bonding between the cone-shaped bump and the simple pad electrode was found to be realized at 150°C. More than 10,000 connections with about 100 mΩ/bump were formed. When the cross-shaped slit was employed, room-temperature bonding was achieved.
AB - We show that interconnection bonding of LSI chip to metallization on polyethylene naphthalate) (PEN) film can be realized by using cone-shaped compliant bump. We have investigated two designs of the counter electrode. One is simple metal pad electrode and the other is an electrode in which cross-shaped slit was formed. The bonding between the cone-shaped bump and the simple pad electrode was found to be realized at 150°C. More than 10,000 connections with about 100 mΩ/bump were formed. When the cross-shaped slit was employed, room-temperature bonding was achieved.
UR - http://www.scopus.com/inward/record.url?scp=84866849104&partnerID=8YFLogxK
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U2 - 10.1109/3DIC.2012.6263012
DO - 10.1109/3DIC.2012.6263012
M3 - Conference contribution
AN - SCOPUS:84866849104
SN - 9781467321891
T3 - 2011 IEEE International 3D Systems Integration Conference, 3DIC 2011
BT - 2011 IEEE International 3D Systems Integration Conference, 3DIC 2011
T2 - 2011 IEEE International 3D Systems Integration Conference, 3DIC 2011
Y2 - 31 January 2012 through 2 February 2012
ER -