Low-temperature bonding of laser diode chips using atmospheric-pressure plasma activation of flat topped Au stud bumps with smooth surfaces

Michitaka Yamamoto; Takeshi Sato; Eiji Higurashi; Tadatomo Suga; Renshi Sawada

doi:10.1109/ICSJ.2012.6523387

Low-temperature bonding of laser diode chips using atmospheric-pressure plasma activation of flat topped Au stud bumps with smooth surfaces

Michitaka Yamamoto, Takeshi Sato, Eiji Higurashi, Tadatomo Suga, Renshi Sawada

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

4 Citations (Scopus)

Abstract

Surface activation by atmospheric-pressure plasma has been used for low-temperature bonding of laser diode (LD) chips. Coined Au stud bumps with smooth surfaces (Ra: 1.3 nm) and Au thin film electrodes (Ra: 2.1 nm) of LD chips were activated by Ar+O₂ or Ar+H₂ atmospheric-pressure plasma for 30 s and bonded in ambient air at low-temperature (25-150°C). Bonding strength was high enough to exceed the strength requirement of MIL-STD-883F, method 2019 (x2). The measured results of light-current-voltage (L-I-V) characteristics of the LD chips indicated no degradation after bonding.

Original language	English
Title of host publication	2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012
DOIs	https://doi.org/10.1109/ICSJ.2012.6523387
Publication status	Published - 2012
Event	2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012 - Kyoto, Japan Duration: Dec 10 2012 → Dec 12 2012

Publication series

Name	2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012

Other

Other	2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012
Country/Territory	Japan
City	Kyoto
Period	12/10/12 → 12/12/12

All Science Journal Classification (ASJC) codes

Hardware and Architecture
Electrical and Electronic Engineering

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10.1109/ICSJ.2012.6523387

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Low-temperature bonding of laser diode chips using atmospheric-pressure plasma activation of flat topped Au stud bumps with smooth surfaces. / Yamamoto, Michitaka; Sato, Takeshi; Higurashi, Eiji et al.
2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012. 2012. 6523387 (2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yamamoto, M, Sato, T, Higurashi, E, Suga, T & Sawada, R 2012, Low-temperature bonding of laser diode chips using atmospheric-pressure plasma activation of flat topped Au stud bumps with smooth surfaces. in 2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012., 6523387, 2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012, 2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012, Kyoto, Japan, 12/10/12. https://doi.org/10.1109/ICSJ.2012.6523387

@inproceedings{2ab14bc2b17c4022ab1357a3189c5bb4,

title = "Low-temperature bonding of laser diode chips using atmospheric-pressure plasma activation of flat topped Au stud bumps with smooth surfaces",

abstract = "Surface activation by atmospheric-pressure plasma has been used for low-temperature bonding of laser diode (LD) chips. Coined Au stud bumps with smooth surfaces (Ra: 1.3 nm) and Au thin film electrodes (Ra: 2.1 nm) of LD chips were activated by Ar+O2 or Ar+H2 atmospheric-pressure plasma for 30 s and bonded in ambient air at low-temperature (25-150°C). Bonding strength was high enough to exceed the strength requirement of MIL-STD-883F, method 2019 (x2). The measured results of light-current-voltage (L-I-V) characteristics of the LD chips indicated no degradation after bonding.",

author = "Michitaka Yamamoto and Takeshi Sato and Eiji Higurashi and Tadatomo Suga and Renshi Sawada",

year = "2012",

doi = "10.1109/ICSJ.2012.6523387",

language = "English",

isbn = "9781467326551",

series = "2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012",

booktitle = "2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012",

note = "2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012 ; Conference date: 10-12-2012 Through 12-12-2012",

}

TY - GEN

T1 - Low-temperature bonding of laser diode chips using atmospheric-pressure plasma activation of flat topped Au stud bumps with smooth surfaces

AU - Yamamoto, Michitaka

AU - Sato, Takeshi

AU - Higurashi, Eiji

AU - Suga, Tadatomo

AU - Sawada, Renshi

PY - 2012

Y1 - 2012

N2 - Surface activation by atmospheric-pressure plasma has been used for low-temperature bonding of laser diode (LD) chips. Coined Au stud bumps with smooth surfaces (Ra: 1.3 nm) and Au thin film electrodes (Ra: 2.1 nm) of LD chips were activated by Ar+O2 or Ar+H2 atmospheric-pressure plasma for 30 s and bonded in ambient air at low-temperature (25-150°C). Bonding strength was high enough to exceed the strength requirement of MIL-STD-883F, method 2019 (x2). The measured results of light-current-voltage (L-I-V) characteristics of the LD chips indicated no degradation after bonding.

AB - Surface activation by atmospheric-pressure plasma has been used for low-temperature bonding of laser diode (LD) chips. Coined Au stud bumps with smooth surfaces (Ra: 1.3 nm) and Au thin film electrodes (Ra: 2.1 nm) of LD chips were activated by Ar+O2 or Ar+H2 atmospheric-pressure plasma for 30 s and bonded in ambient air at low-temperature (25-150°C). Bonding strength was high enough to exceed the strength requirement of MIL-STD-883F, method 2019 (x2). The measured results of light-current-voltage (L-I-V) characteristics of the LD chips indicated no degradation after bonding.

UR - http://www.scopus.com/inward/record.url?scp=84879773698&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84879773698&partnerID=8YFLogxK

U2 - 10.1109/ICSJ.2012.6523387

DO - 10.1109/ICSJ.2012.6523387

M3 - Conference contribution

AN - SCOPUS:84879773698

SN - 9781467326551

T3 - 2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012

BT - 2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012

T2 - 2012 2nd IEEE CPMT Symposium Japan, ICSJ 2012

Y2 - 10 December 2012 through 12 December 2012

ER -

Low-temperature bonding of laser diode chips using atmospheric-pressure plasma activation of flat topped Au stud bumps with smooth surfaces

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