TY - JOUR
T1 - Low-temperature bonding of laser diode chips on silicon substrates using plasma activation of Au films
AU - Higurashi, Eiji
AU - Imamura, Teppei
AU - Suga, Tadatomo
AU - Sawada, Renshi
N1 - Funding Information:
Manuscript received July 24, 2007; revised August 25, 2007. This work was supported in part by the Industrial Technology Research Grant Program in 2006 from New Energy and Industrial Technology Development Organization (NEDO) of Japan. E. Higurashi is with the Research Center for Advanced Science and Technology, The University of Tokyo, Tokyo 153-8904, Japan (e-mail: eiji@su.t.u-tokyo.ac.jp). T. Imamura and T. Suga are with the Department of Precision Engineering, School of Engineering, The University of Tokyo, Tokyo 113-8656, Japan. R. Sawada is with the Department of Intelligent Machinery and Systems, Kyushu University, Fukuoka 819-0395, Japan. Color versions of one or more of the figures in this letter are available online at http://ieeexplore.ieee.org. Digital Object Identifier 10.1109/LPT.2007.908642
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2007/12/15
Y1 - 2007/12/15
N2 - A low-temperature bonding of vertical-cavity surface-emitting laser (VCSEL) chips on Si substrates was achieved by using plasma activation of Au films. After the surfaces of Au films were cleaned using an Ar radio frequency plasma, bonding was carried out by contact in ambient air with applied static pressure. The experimental results showed that surface morphological change (the reduction of asperity width) as well as removal of adsorbed organic contaminants by plasma treatment significantly improved the quality of joints. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.
AB - A low-temperature bonding of vertical-cavity surface-emitting laser (VCSEL) chips on Si substrates was achieved by using plasma activation of Au films. After the surfaces of Au films were cleaned using an Ar radio frequency plasma, bonding was carried out by contact in ambient air with applied static pressure. The experimental results showed that surface morphological change (the reduction of asperity width) as well as removal of adsorbed organic contaminants by plasma treatment significantly improved the quality of joints. At a bonding temperature of 100°C, the die-shear strength exceeded the failure criteria of MIL-STD-883.
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U2 - 10.1109/LPT.2007.908642
DO - 10.1109/LPT.2007.908642
M3 - Article
AN - SCOPUS:36849000258
SN - 1041-1135
VL - 19
SP - 1994
EP - 1996
JO - IEEE Photonics Technology Letters
JF - IEEE Photonics Technology Letters
IS - 24
ER -