TY - GEN
T1 - Low temperature (~300°C) epitaxial growth of SiGe by liquid-solid coexisting annealing of A-GeSn/Si(100) structure
AU - Chikita, Hironori
AU - Matsumura, Ryo
AU - Sadoh, T.
AU - Miyao, M.
PY - 2014
Y1 - 2014
N2 - To develop a new low-temperature crystallization technique, annealing characteristics of a-GeSn/Si(100) structures are investigated. It is revealed that epitaxial growth accompanying Si-Ge mixing is generated at temperatures in the liquid-solid coexisting region of the Ge-Sn system. The annealing temperature necessary for epitaxial growth is significantly decreased by increasing annealing time and/or Sn concentration. Consequently, epitaxial growth at 300°C becomes possible. These findings are expected to be useful to realize next-generation large-scale integrated circuits, where various multi-functional devices are integrated.
AB - To develop a new low-temperature crystallization technique, annealing characteristics of a-GeSn/Si(100) structures are investigated. It is revealed that epitaxial growth accompanying Si-Ge mixing is generated at temperatures in the liquid-solid coexisting region of the Ge-Sn system. The annealing temperature necessary for epitaxial growth is significantly decreased by increasing annealing time and/or Sn concentration. Consequently, epitaxial growth at 300°C becomes possible. These findings are expected to be useful to realize next-generation large-scale integrated circuits, where various multi-functional devices are integrated.
UR - http://www.scopus.com/inward/record.url?scp=84891906843&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84891906843&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/AMM.481.137
DO - 10.4028/www.scientific.net/AMM.481.137
M3 - Conference contribution
AN - SCOPUS:84891906843
SN - 9783037859681
T3 - Applied Mechanics and Materials
SP - 137
EP - 140
BT - Quantum, Nano, Micro Technologies and Applied Researches
T2 - 2013 2nd International Symposium on Quantum, Nano and Micro Technologies, ISQNM 2013
Y2 - 1 December 2013 through 2 December 2013
ER -