Low temperature (∼250°C) layer exchange crystallization of Si 1 - XGe x (x = 1-0) on insulator for advanced flexible devices

Jong Hyeok Park; Masashi Kurosawa; Naoyuki Kawabata; Masanobu Miyao; Taizoh Sadoh

doi:10.1016/j.tsf.2011.10.087

Low temperature (∼250°C) layer exchange crystallization of Si _{1 - X}Ge _x (x = 1-0) on insulator for advanced flexible devices

Jong Hyeok Park, Masashi Kurosawa, Naoyuki Kawabata, Masanobu Miyao, Taizoh Sadoh

Electronic Devices

Research output: Contribution to journal › Article › peer-review

28 Citations (Scopus)

Abstract

Low-temperature (∼250°C) layer exchange crystallization of poly-Si _{1 - x}Ge _x (x = 1-0) films on insulators has been investigated for realization of advanced flexible devices. We propose utilization of Au as catalyst to enhance the crystallization at low temperatures. By annealing (∼250°C, 20 h) of the a-Si _{1 - x}Ge _x (x = 1-0)/Au stacked structures formed on insulating substrates, the SiGe and Au layers exchange their positions, and Au/poly-SiGe stacked structures are obtained. The Ge fractions of the obtained poly-SiGe layers are identical to that of the initial a-SiGe layers, and there is no Si or Ge segregation. This low temperature crystallization technique enables poly-SiGe films on plastic substrates, which are essential to realize advanced flexible devices.

Original language	English
Pages (from-to)	3293-3295
Number of pages	3
Journal	Thin Solid Films
Volume	520
Issue number	8
DOIs	https://doi.org/10.1016/j.tsf.2011.10.087
Publication status	Published - Feb 1 2012

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2011.10.087

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title = "Low temperature (∼250°C) layer exchange crystallization of Si 1 - XGe x (x = 1-0) on insulator for advanced flexible devices",

abstract = "Low-temperature (∼250°C) layer exchange crystallization of poly-Si 1 - xGe x (x = 1-0) films on insulators has been investigated for realization of advanced flexible devices. We propose utilization of Au as catalyst to enhance the crystallization at low temperatures. By annealing (∼250°C, 20 h) of the a-Si 1 - xGe x (x = 1-0)/Au stacked structures formed on insulating substrates, the SiGe and Au layers exchange their positions, and Au/poly-SiGe stacked structures are obtained. The Ge fractions of the obtained poly-SiGe layers are identical to that of the initial a-SiGe layers, and there is no Si or Ge segregation. This low temperature crystallization technique enables poly-SiGe films on plastic substrates, which are essential to realize advanced flexible devices.",

author = "Park, {Jong Hyeok} and Masashi Kurosawa and Naoyuki Kawabata and Masanobu Miyao and Taizoh Sadoh",

note = "Funding Information: A part of this work was supported by Research Foundation for Materials Science , and a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan.",

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AU - Park, Jong Hyeok

AU - Kurosawa, Masashi

AU - Kawabata, Naoyuki

AU - Miyao, Masanobu

AU - Sadoh, Taizoh

N1 - Funding Information: A part of this work was supported by Research Foundation for Materials Science , and a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science and Technology of Japan.

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N2 - Low-temperature (∼250°C) layer exchange crystallization of poly-Si 1 - xGe x (x = 1-0) films on insulators has been investigated for realization of advanced flexible devices. We propose utilization of Au as catalyst to enhance the crystallization at low temperatures. By annealing (∼250°C, 20 h) of the a-Si 1 - xGe x (x = 1-0)/Au stacked structures formed on insulating substrates, the SiGe and Au layers exchange their positions, and Au/poly-SiGe stacked structures are obtained. The Ge fractions of the obtained poly-SiGe layers are identical to that of the initial a-SiGe layers, and there is no Si or Ge segregation. This low temperature crystallization technique enables poly-SiGe films on plastic substrates, which are essential to realize advanced flexible devices.

AB - Low-temperature (∼250°C) layer exchange crystallization of poly-Si 1 - xGe x (x = 1-0) films on insulators has been investigated for realization of advanced flexible devices. We propose utilization of Au as catalyst to enhance the crystallization at low temperatures. By annealing (∼250°C, 20 h) of the a-Si 1 - xGe x (x = 1-0)/Au stacked structures formed on insulating substrates, the SiGe and Au layers exchange their positions, and Au/poly-SiGe stacked structures are obtained. The Ge fractions of the obtained poly-SiGe layers are identical to that of the initial a-SiGe layers, and there is no Si or Ge segregation. This low temperature crystallization technique enables poly-SiGe films on plastic substrates, which are essential to realize advanced flexible devices.

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Low temperature (∼250°C) layer exchange crystallization of Si _{1 - X}Ge _x (x = 1-0) on insulator for advanced flexible devices

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