Low-temperature (∼ 250°C) Cu-induced lateral crystallization of amorphous Ge on insulator

Taizoh Sadoh, Masashi Kurosawa, Takashi Hagihara, Kaoru Toko, Masanobu Miyao

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36 Citations (Scopus)


Metal-induced lateral crystallization (MILC) of amorphous Ge has been investigated to realize low temperature formation of poly-Ge films on insulating substrates. From a comparative study of MILC with various catalysis metals (Ni, Co, Pd, and Cu), it was found that Cu enhanced both nucleation and subsequent nucleus growth the most significantly among the species. Consequently, low temperature (∼ 250°C) growth with a high velocity (∼1 m/h) of poly-Ge films becomes possible by employing Cu as the catalyst. This technique will accelerate the realization of advanced high-speed TFT on flexible substrates.

Original languageEnglish
Pages (from-to)H274-H276
JournalElectrochemical and Solid-State Letters
Issue number7
Publication statusPublished - 2011

All Science Journal Classification (ASJC) codes

  • General Chemical Engineering
  • General Materials Science
  • Physical and Theoretical Chemistry
  • Electrochemistry
  • Electrical and Electronic Engineering


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