Low-power, low-voltage CMOS ultra-wideband low noise amplifier for portable devices

K. Yousef; Hongting Jia; Ramesh Pokharel; A. Allam; M. Ragab; Haruichi Kanaya; K. Yoshida

doi:10.1109/JEC-ECC.2013.6766387

Low-power, low-voltage CMOS ultra-wideband low noise amplifier for portable devices

K. Yousef, Hongting Jia, Ramesh Pokharel, A. Allam, M. Ragab, Haruichi Kanaya, K. Yoshida

Research output: Contribution to conference › Paper › peer-review

2 Citations (Scopus)

Abstract

This paper presents the design of an ultra wideband low noise amplifier (UWB LNA). The proposed UWB LNA employs common gate and common source stages configured as a current reuse topology. The UWB LNA has a maximum gain of 14 dB with minimum NF of 3.0 dB. Good input and output impedance matching are achieved over the operating frequency band. The proposed UWB LNA consumes only 2.0 mW from a 0.9V power supply. This UWB LNA is designed and simulated in the standard 0.18 μm CMOS technology.

Original language	English
Pages	68-70
Number of pages	3
DOIs	https://doi.org/10.1109/JEC-ECC.2013.6766387
Publication status	Published - Jan 1 2013
Event	2013 2nd International Japan-Egypt Conference on Electronics, Communications and Computers, JEC-ECC 2013 - Cairo, Egypt Duration: Dec 17 2013 → Dec 19 2013

Other

Other	2013 2nd International Japan-Egypt Conference on Electronics, Communications and Computers, JEC-ECC 2013
Country/Territory	Egypt
City	Cairo
Period	12/17/13 → 12/19/13

All Science Journal Classification (ASJC) codes

Computer Networks and Communications
Electrical and Electronic Engineering

Access to Document

10.1109/JEC-ECC.2013.6766387

Cite this

Yousef, K, Jia, H, Pokharel, R, Allam, A, Ragab, M, Kanaya, H & Yoshida, K 2013, 'Low-power, low-voltage CMOS ultra-wideband low noise amplifier for portable devices', Paper presented at 2013 2nd International Japan-Egypt Conference on Electronics, Communications and Computers, JEC-ECC 2013, Cairo, Egypt, 12/17/13 - 12/19/13 pp. 68-70. https://doi.org/10.1109/JEC-ECC.2013.6766387

@conference{8348cf46bbfa4994a48853a27620a1f1,

title = "Low-power, low-voltage CMOS ultra-wideband low noise amplifier for portable devices",

abstract = "This paper presents the design of an ultra wideband low noise amplifier (UWB LNA). The proposed UWB LNA employs common gate and common source stages configured as a current reuse topology. The UWB LNA has a maximum gain of 14 dB with minimum NF of 3.0 dB. Good input and output impedance matching are achieved over the operating frequency band. The proposed UWB LNA consumes only 2.0 mW from a 0.9V power supply. This UWB LNA is designed and simulated in the standard 0.18 μm CMOS technology.",

author = "K. Yousef and Hongting Jia and Ramesh Pokharel and A. Allam and M. Ragab and Haruichi Kanaya and K. Yoshida",

year = "2013",

month = jan,

day = "1",

doi = "10.1109/JEC-ECC.2013.6766387",

language = "English",

pages = "68--70",

note = "2013 2nd International Japan-Egypt Conference on Electronics, Communications and Computers, JEC-ECC 2013 ; Conference date: 17-12-2013 Through 19-12-2013",

}

TY - CONF

T1 - Low-power, low-voltage CMOS ultra-wideband low noise amplifier for portable devices

AU - Yousef, K.

AU - Jia, Hongting

AU - Pokharel, Ramesh

AU - Allam, A.

AU - Ragab, M.

AU - Kanaya, Haruichi

AU - Yoshida, K.

PY - 2013/1/1

Y1 - 2013/1/1

N2 - This paper presents the design of an ultra wideband low noise amplifier (UWB LNA). The proposed UWB LNA employs common gate and common source stages configured as a current reuse topology. The UWB LNA has a maximum gain of 14 dB with minimum NF of 3.0 dB. Good input and output impedance matching are achieved over the operating frequency band. The proposed UWB LNA consumes only 2.0 mW from a 0.9V power supply. This UWB LNA is designed and simulated in the standard 0.18 μm CMOS technology.

AB - This paper presents the design of an ultra wideband low noise amplifier (UWB LNA). The proposed UWB LNA employs common gate and common source stages configured as a current reuse topology. The UWB LNA has a maximum gain of 14 dB with minimum NF of 3.0 dB. Good input and output impedance matching are achieved over the operating frequency band. The proposed UWB LNA consumes only 2.0 mW from a 0.9V power supply. This UWB LNA is designed and simulated in the standard 0.18 μm CMOS technology.

UR - http://www.scopus.com/inward/record.url?scp=84899033423&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84899033423&partnerID=8YFLogxK

U2 - 10.1109/JEC-ECC.2013.6766387

DO - 10.1109/JEC-ECC.2013.6766387

M3 - Paper

AN - SCOPUS:84899033423

SP - 68

EP - 70

T2 - 2013 2nd International Japan-Egypt Conference on Electronics, Communications and Computers, JEC-ECC 2013

Y2 - 17 December 2013 through 19 December 2013

ER -

Low-power, low-voltage CMOS ultra-wideband low noise amplifier for portable devices

Abstract

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this