Low noise superjunction MOSFET with integrated snubber structure

Hiroaki Yamashita; Syotaro Ono; Hisao Ichijo; Masataka Tsuji; Takenori Yasuzumi; Masaru Izumisawa; Wataru Saito

doi:10.1109/ISPSD.2018.8393595

Low noise superjunction MOSFET with integrated snubber structure

Hiroaki Yamashita, Syotaro Ono, Hisao Ichijo, Masataka Tsuji, Takenori Yasuzumi, Masaru Izumisawa, Wataru Saito

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

7 Citations (Scopus)

Abstract

Novel superjunction (SJ)-MOSFET structure with distributed internal snubber area is proposed. RC network composed by gate electrode, oxide and P-Type pillar provides frequency-dependent capacitive coupling between each terminal. The snubber area acts as gate-drain capacitance (Cgd) only at high-frequency band. Switching noise generated during turn-off transient is absorbed by the snubber without increasing switching loss. We verified the concept by simulation and experiments, and confirmed better trade-off between EMI (Electromagnetic interference) and efficiency.

Original language	English
Title of host publication	2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	32-35
Number of pages	4
ISBN (Electronic)	9781538629260
DOIs	https://doi.org/10.1109/ISPSD.2018.8393595
Publication status	Published - Jun 22 2018
Externally published	Yes
Event	30th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018 - Chicago, United States Duration: May 13 2018 → May 17 2018

Publication series

Name	Proceedings of the International Symposium on Power Semiconductor Devices and ICs
Volume	2018-May
ISSN (Print)	1063-6854

Conference

Conference	30th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018
Country/Territory	United States
City	Chicago
Period	5/13/18 → 5/17/18

All Science Journal Classification (ASJC) codes

Engineering(all)

Access to Document

10.1109/ISPSD.2018.8393595

Cite this

Yamashita, H., Ono, S., Ichijo, H., Tsuji, M., Yasuzumi, T., Izumisawa, M., & Saito, W. (2018). Low noise superjunction MOSFET with integrated snubber structure. In 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018 (pp. 32-35). (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2018-May). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/ISPSD.2018.8393595

Low noise superjunction MOSFET with integrated snubber structure. / Yamashita, Hiroaki; Ono, Syotaro; Ichijo, Hisao et al.
2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018. Institute of Electrical and Electronics Engineers Inc., 2018. p. 32-35 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs; Vol. 2018-May).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Yamashita, H, Ono, S, Ichijo, H, Tsuji, M, Yasuzumi, T, Izumisawa, M & Saito, W 2018, Low noise superjunction MOSFET with integrated snubber structure. in 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018. Proceedings of the International Symposium on Power Semiconductor Devices and ICs, vol. 2018-May, Institute of Electrical and Electronics Engineers Inc., pp. 32-35, 30th IEEE International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018, Chicago, United States, 5/13/18. https://doi.org/10.1109/ISPSD.2018.8393595

Yamashita H, Ono S, Ichijo H, Tsuji M, Yasuzumi T, Izumisawa M et al. Low noise superjunction MOSFET with integrated snubber structure. In 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018. Institute of Electrical and Electronics Engineers Inc. 2018. p. 32-35. (Proceedings of the International Symposium on Power Semiconductor Devices and ICs). doi: 10.1109/ISPSD.2018.8393595

Yamashita, Hiroaki ; Ono, Syotaro ; Ichijo, Hisao et al. / Low noise superjunction MOSFET with integrated snubber structure. 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs, ISPSD 2018. Institute of Electrical and Electronics Engineers Inc., 2018. pp. 32-35 (Proceedings of the International Symposium on Power Semiconductor Devices and ICs).

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abstract = "Novel superjunction (SJ)-MOSFET structure with distributed internal snubber area is proposed. RC network composed by gate electrode, oxide and P-Type pillar provides frequency-dependent capacitive coupling between each terminal. The snubber area acts as gate-drain capacitance (Cgd) only at high-frequency band. Switching noise generated during turn-off transient is absorbed by the snubber without increasing switching loss. We verified the concept by simulation and experiments, and confirmed better trade-off between EMI (Electromagnetic interference) and efficiency.",

author = "Hiroaki Yamashita and Syotaro Ono and Hisao Ichijo and Masataka Tsuji and Takenori Yasuzumi and Masaru Izumisawa and Wataru Saito",

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AU - Yamashita, Hiroaki

AU - Ono, Syotaro

AU - Ichijo, Hisao

AU - Tsuji, Masataka

AU - Yasuzumi, Takenori

AU - Izumisawa, Masaru

AU - Saito, Wataru

PY - 2018/6/22

Y1 - 2018/6/22

N2 - Novel superjunction (SJ)-MOSFET structure with distributed internal snubber area is proposed. RC network composed by gate electrode, oxide and P-Type pillar provides frequency-dependent capacitive coupling between each terminal. The snubber area acts as gate-drain capacitance (Cgd) only at high-frequency band. Switching noise generated during turn-off transient is absorbed by the snubber without increasing switching loss. We verified the concept by simulation and experiments, and confirmed better trade-off between EMI (Electromagnetic interference) and efficiency.

AB - Novel superjunction (SJ)-MOSFET structure with distributed internal snubber area is proposed. RC network composed by gate electrode, oxide and P-Type pillar provides frequency-dependent capacitive coupling between each terminal. The snubber area acts as gate-drain capacitance (Cgd) only at high-frequency band. Switching noise generated during turn-off transient is absorbed by the snubber without increasing switching loss. We verified the concept by simulation and experiments, and confirmed better trade-off between EMI (Electromagnetic interference) and efficiency.

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Low noise superjunction MOSFET with integrated snubber structure

Abstract

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