TY - GEN
T1 - Low insertion loss 60 GHz CMOS H-shaped resonator BPF
AU - Barakat, Adel
AU - Mahmoud, Nessim
AU - Pokharel, Ramesh K.
PY - 2017/3/23
Y1 - 2017/3/23
N2 - This paper presents a low insertion less 60 GHz on-chip bandpass filter (BPF) on 0.18 μm standard CMOS technology. For insertion loss minimization, this BPF uses the H-shaped resonator which couples through two branches and the rectangular defected ground structures (DGS) which reduce the external quality factor. Besides, this BPF employs metal-insulator-metal capacitor to ensure size compactness. The fabricated BPF chip size is 240 μm × 650 μm. The simulation results agree well with the measured ones. The measured insertion loss is 2.1 dB at 60GHz.
AB - This paper presents a low insertion less 60 GHz on-chip bandpass filter (BPF) on 0.18 μm standard CMOS technology. For insertion loss minimization, this BPF uses the H-shaped resonator which couples through two branches and the rectangular defected ground structures (DGS) which reduce the external quality factor. Besides, this BPF employs metal-insulator-metal capacitor to ensure size compactness. The fabricated BPF chip size is 240 μm × 650 μm. The simulation results agree well with the measured ones. The measured insertion loss is 2.1 dB at 60GHz.
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U2 - 10.1109/RWS.2017.7885983
DO - 10.1109/RWS.2017.7885983
M3 - Conference contribution
AN - SCOPUS:85018171716
T3 - IEEE Radio and Wireless Symposium, RWS
SP - 187
EP - 189
BT - 2017 IEEE Radio and Wireless Symposium, RWS 2017
PB - IEEE Computer Society
T2 - 2017 IEEE Radio and Wireless Symposium, RWS 2017
Y2 - 15 January 2017 through 18 January 2017
ER -