Low hysteresis threshold current (39mA) demonstration using active multi-mode interferometer bi-stable laser diodes

Haisong Jiang; Hany Ayad Bastawrous; Takuma Hagio; Shinji Matsuo; Kiichi Hamamoto

doi:10.1109/ISLC.2010.5642722

Low hysteresis threshold current (39mA) demonstration using active multi-mode interferometer bi-stable laser diodes

Haisong Jiang, Hany Ayad Bastawrous, Takuma Hagio, Shinji Matsuo, Kiichi Hamamoto

Electrical Engineering Sciences

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

Low hysteresis threshold current (39mA) was demonstrated using active multi-mode interferometer bistable laser diodes. Higher cross-gain saturation with significant reduction of saturable absorber region resulted in low threshold with maintaining wide hysteresis.

Original language	English
Title of host publication	2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010
Pages	123-124
Number of pages	2
DOIs	https://doi.org/10.1109/ISLC.2010.5642722
Publication status	Published - 2010
Event	2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010 - Kyoto, Japan Duration: Sept 26 2010 → Sept 30 2010

Publication series

Name	Conference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)	0899-9406

Other

Other	2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010
Country/Territory	Japan
City	Kyoto
Period	9/26/10 → 9/30/10

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/ISLC.2010.5642722

Cite this

Jiang, H., Bastawrous, H. A., Hagio, T., Matsuo, S., & Hamamoto, K. (2010). Low hysteresis threshold current (39mA) demonstration using active multi-mode interferometer bi-stable laser diodes. In 2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010 (pp. 123-124). Article 5642722 (Conference Digest - IEEE International Semiconductor Laser Conference). https://doi.org/10.1109/ISLC.2010.5642722

Low hysteresis threshold current (39mA) demonstration using active multi-mode interferometer bi-stable laser diodes. / Jiang, Haisong; Bastawrous, Hany Ayad; Hagio, Takuma et al.
2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010. 2010. p. 123-124 5642722 (Conference Digest - IEEE International Semiconductor Laser Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Jiang, H, Bastawrous, HA, Hagio, T, Matsuo, S & Hamamoto, K 2010, Low hysteresis threshold current (39mA) demonstration using active multi-mode interferometer bi-stable laser diodes. in 2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010., 5642722, Conference Digest - IEEE International Semiconductor Laser Conference, pp. 123-124, 2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010, Kyoto, Japan, 9/26/10. https://doi.org/10.1109/ISLC.2010.5642722

Jiang H, Bastawrous HA, Hagio T, Matsuo S, Hamamoto K. Low hysteresis threshold current (39mA) demonstration using active multi-mode interferometer bi-stable laser diodes. In 2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010. 2010. p. 123-124. 5642722. (Conference Digest - IEEE International Semiconductor Laser Conference). doi: 10.1109/ISLC.2010.5642722

@inproceedings{cc266c85669741138ea3847bebe33714,

title = "Low hysteresis threshold current (39mA) demonstration using active multi-mode interferometer bi-stable laser diodes",

abstract = "Low hysteresis threshold current (39mA) was demonstrated using active multi-mode interferometer bistable laser diodes. Higher cross-gain saturation with significant reduction of saturable absorber region resulted in low threshold with maintaining wide hysteresis.",

author = "Haisong Jiang and Bastawrous, {Hany Ayad} and Takuma Hagio and Shinji Matsuo and Kiichi Hamamoto",

year = "2010",

doi = "10.1109/ISLC.2010.5642722",

language = "English",

isbn = "9781424456833",

series = "Conference Digest - IEEE International Semiconductor Laser Conference",

pages = "123--124",

booktitle = "2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010",

note = "2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010 ; Conference date: 26-09-2010 Through 30-09-2010",

}

TY - GEN

T1 - Low hysteresis threshold current (39mA) demonstration using active multi-mode interferometer bi-stable laser diodes

AU - Jiang, Haisong

AU - Bastawrous, Hany Ayad

AU - Hagio, Takuma

AU - Matsuo, Shinji

AU - Hamamoto, Kiichi

PY - 2010

Y1 - 2010

N2 - Low hysteresis threshold current (39mA) was demonstrated using active multi-mode interferometer bistable laser diodes. Higher cross-gain saturation with significant reduction of saturable absorber region resulted in low threshold with maintaining wide hysteresis.

AB - Low hysteresis threshold current (39mA) was demonstrated using active multi-mode interferometer bistable laser diodes. Higher cross-gain saturation with significant reduction of saturable absorber region resulted in low threshold with maintaining wide hysteresis.

UR - http://www.scopus.com/inward/record.url?scp=78651077569&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78651077569&partnerID=8YFLogxK

U2 - 10.1109/ISLC.2010.5642722

DO - 10.1109/ISLC.2010.5642722

M3 - Conference contribution

AN - SCOPUS:78651077569

SN - 9781424456833

T3 - Conference Digest - IEEE International Semiconductor Laser Conference

SP - 123

EP - 124

BT - 2010 22nd IEEE International Semiconductor Laser Conference, ISLC 2010

T2 - 2010 IEEE 22nd International Semiconductor Laser Conference, ISLC 2010

Y2 - 26 September 2010 through 30 September 2010

ER -

Low hysteresis threshold current (39mA) demonstration using active multi-mode interferometer bi-stable laser diodes

Abstract

Publication series

Other

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this