TY - GEN
T1 - Low erosion tungsten CMP process with high productivity
AU - Shiratani, M.
AU - Kumazawa, K.
PY - 2006/12/1
Y1 - 2006/12/1
N2 - The erosion generated by the over-polishing step of tungsten CMP (chemical mechanical polishing) may cause metal residue in the surface of upper copper (Cu) damascene interconnects. Generally, lower downforce is effective to decrease the erosion1). However, the throughput of W CMP decreases, since the low downforce polishing requires a longer polish time. In this paper, a W CMP procedure with low erosion and high productivity is discussed focusing on differences in incubation times. The procedure contains two polishing steps: shortening the incubation time and suppressing erosion in the over-polishing stage.
AB - The erosion generated by the over-polishing step of tungsten CMP (chemical mechanical polishing) may cause metal residue in the surface of upper copper (Cu) damascene interconnects. Generally, lower downforce is effective to decrease the erosion1). However, the throughput of W CMP decreases, since the low downforce polishing requires a longer polish time. In this paper, a W CMP procedure with low erosion and high productivity is discussed focusing on differences in incubation times. The procedure contains two polishing steps: shortening the incubation time and suppressing erosion in the over-polishing stage.
UR - http://www.scopus.com/inward/record.url?scp=50249167750&partnerID=8YFLogxK
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U2 - 10.1109/ISSM.2006.4493046
DO - 10.1109/ISSM.2006.4493046
M3 - Conference contribution
AN - SCOPUS:50249167750
SN - 9784990413804
T3 - IEEE International Symposium on Semiconductor Manufacturing Conference Proceedings
SP - 149
EP - 151
BT - ISSM 2006 Conference Proceedings - Fifteenth International Symposium on Semiconductor Manufacturing
T2 - ISSM 2006 - 15th International Symposium on Semiconductor Manufacturing
Y2 - 25 September 2007 through 27 September 2007
ER -