Low-energy magnetoelectric control of domain states in exchange-coupled heterostructures

Muftah Al-Mahdawi, Satya Prakash Pati, Yohei Shiokawa, Shujun Ye, Tomohiro Nozaki, Masashi Sahashi

Research output: Contribution to journalArticlepeer-review

25 Citations (Scopus)


The electric manipulation of antiferromagnets has become an area of great interest recently for zero-stray-field spintronic devices, and for their rich spin dynamics. Generally, the application of antiferromagnetic media for information memories and storage requires a heterostructure with a ferromagnetic layer for readout through the exchange-bias field. In magnetoelectric and multiferroic antiferromagnets, the exchange coupling exerts an additional impediment (energy barrier) to magnetization reversal by the applied magnetoelectric energy. We proposed and verified a method to overcome this barrier. We controlled the energy required for switching the magnetic domains in magnetoelectric Cr2O3 films by compensating the exchange-coupling energy from the ferromagnetic layer with the Zeeman energy of a small volumetric spontaneous magnetization found for the sputtered Cr2O3 films. Based on a simplified phenomenological model of the field-cooling process, the magnetic and electric fields required for switching could be tuned. As an example, the switching of antiferromagnetic domains around a zero-threshold electric field was demonstrated at a magnetic field of 2.6 kOe.

Original languageEnglish
Article number144423
JournalPhysical Review B
Issue number14
Publication statusPublished - Apr 17 2017

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics


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