Low energy ion scattering: Surface preparation and analysis of Cu(In,Ga)Se2 for photovoltaic applications

Helena Téllez; John Druce; Allen Hall; Tatsumi Ishihara; John Kilner; Angus Rockett

doi:10.1002/pip.2535

Low energy ion scattering: Surface preparation and analysis of Cu(In,Ga)Se₂ for photovoltaic applications

Helena Téllez, John Druce, Allen Hall, Tatsumi Ishihara, John Kilner, Angus Rockett

Research output: Contribution to journal › Article › peer-review

3 Citations (Scopus)

Abstract

Cu(In,Ga)Se₂ (CIGS) single-crystal epitaxial films have been analyzed by low energy ion scattering, which is sensitive to exactly the outermost surface atomic layer, to determine the surface chemistry as a function of preparation conditions. The samples were grown by a hybrid sputtering and evaporation method on cation (A) or anion (B) terminated (111) GaAs substrates and had smooth surfaces. The samples were exposed to excited atomic oxygen or hydrogen beams or were sputtered with 500 eV Ar⁺ ions. Atomic O∗ treatment resulted in an otherwise clean, oxidized surface including all film constituents. Atomic H∗ resulted in strong enhancement of the surface Ga population, probably due to a preexisting Ga native oxide in the outermost atomic layer. Sputtering produced a clean surface that was closest to the bulk composition of the film as measured by energy-dispersive spectroscopy.

Original language	English
Pages (from-to)	1219-1227
Number of pages	9
Journal	Progress in Photovoltaics: Research and Applications
Volume	23
Issue number	10
DOIs	https://doi.org/10.1002/pip.2535
Publication status	Published - Oct 1 2015

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Condensed Matter Physics
Electrical and Electronic Engineering

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This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1002/pip.2535

Cite this

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title = "Low energy ion scattering: Surface preparation and analysis of Cu(In,Ga)Se2 for photovoltaic applications",

abstract = "Cu(In,Ga)Se2 (CIGS) single-crystal epitaxial films have been analyzed by low energy ion scattering, which is sensitive to exactly the outermost surface atomic layer, to determine the surface chemistry as a function of preparation conditions. The samples were grown by a hybrid sputtering and evaporation method on cation (A) or anion (B) terminated (111) GaAs substrates and had smooth surfaces. The samples were exposed to excited atomic oxygen or hydrogen beams or were sputtered with 500 eV Ar+ ions. Atomic O∗ treatment resulted in an otherwise clean, oxidized surface including all film constituents. Atomic H∗ resulted in strong enhancement of the surface Ga population, probably due to a preexisting Ga native oxide in the outermost atomic layer. Sputtering produced a clean surface that was closest to the bulk composition of the film as measured by energy-dispersive spectroscopy.",

author = "Helena T{\'e}llez and John Druce and Allen Hall and Tatsumi Ishihara and John Kilner and Angus Rockett",

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AU - Téllez, Helena

AU - Druce, John

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AU - Ishihara, Tatsumi

AU - Kilner, John

AU - Rockett, Angus

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N2 - Cu(In,Ga)Se2 (CIGS) single-crystal epitaxial films have been analyzed by low energy ion scattering, which is sensitive to exactly the outermost surface atomic layer, to determine the surface chemistry as a function of preparation conditions. The samples were grown by a hybrid sputtering and evaporation method on cation (A) or anion (B) terminated (111) GaAs substrates and had smooth surfaces. The samples were exposed to excited atomic oxygen or hydrogen beams or were sputtered with 500 eV Ar+ ions. Atomic O∗ treatment resulted in an otherwise clean, oxidized surface including all film constituents. Atomic H∗ resulted in strong enhancement of the surface Ga population, probably due to a preexisting Ga native oxide in the outermost atomic layer. Sputtering produced a clean surface that was closest to the bulk composition of the film as measured by energy-dispersive spectroscopy.

AB - Cu(In,Ga)Se2 (CIGS) single-crystal epitaxial films have been analyzed by low energy ion scattering, which is sensitive to exactly the outermost surface atomic layer, to determine the surface chemistry as a function of preparation conditions. The samples were grown by a hybrid sputtering and evaporation method on cation (A) or anion (B) terminated (111) GaAs substrates and had smooth surfaces. The samples were exposed to excited atomic oxygen or hydrogen beams or were sputtered with 500 eV Ar+ ions. Atomic O∗ treatment resulted in an otherwise clean, oxidized surface including all film constituents. Atomic H∗ resulted in strong enhancement of the surface Ga population, probably due to a preexisting Ga native oxide in the outermost atomic layer. Sputtering produced a clean surface that was closest to the bulk composition of the film as measured by energy-dispersive spectroscopy.

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