TY - JOUR
T1 - Low-Energy Ion-Assisted Deposition of Boron Nitride Films in Surface-Wave Plasma
AU - Torigoe, M.
AU - Teii, K.
AU - Matsumoto, S.
N1 - Funding Information:
This work was supported in part by the Grant-in-Aid for Scientific Research (B) from the Japan Society for the Promotion of Science under Grant 26289241 and in part by the Funding Program for Next Generation World-Leading Researchers from Cabinet Office, Government of Japan, under Grant GR080.
PY - 2016/12
Y1 - 2016/12
N2 - A surface-wave plasma operated at 2.45-GHz microwave (MW) is used to deposit hexagonal boron nitride (hBN) films by applying a negative or positive bias voltage to a substrate. Ion energy and flux onto the substrate are examined in terms of MW power, pressure, substrate location, and substrate bias. The mean ion energy is estimated from the sheath potential measured with a Langmuir probe and controlled between a few electronvolts and 170 eV. hBN films are deposited on silicon in a gas mixture of He, N, H, and BFN by varying either the ion energy or substrate temperature under a high ion flux condition (1017 cm-2s-1). The results show that the crystallinity of sp2-bonding network in the films depends upon ion energy more than substrate temperature.
AB - A surface-wave plasma operated at 2.45-GHz microwave (MW) is used to deposit hexagonal boron nitride (hBN) films by applying a negative or positive bias voltage to a substrate. Ion energy and flux onto the substrate are examined in terms of MW power, pressure, substrate location, and substrate bias. The mean ion energy is estimated from the sheath potential measured with a Langmuir probe and controlled between a few electronvolts and 170 eV. hBN films are deposited on silicon in a gas mixture of He, N, H, and BFN by varying either the ion energy or substrate temperature under a high ion flux condition (1017 cm-2s-1). The results show that the crystallinity of sp2-bonding network in the films depends upon ion energy more than substrate temperature.
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U2 - 10.1109/TPS.2016.2628582
DO - 10.1109/TPS.2016.2628582
M3 - Article
AN - SCOPUS:85012928487
SN - 0093-3813
VL - 44
SP - 3219
EP - 3222
JO - IEEE Transactions on Plasma Science
JF - IEEE Transactions on Plasma Science
IS - 12
M1 - 7762178
ER -