Low current magnetic-ram memory operation with a high sensitive spin valve material

K. Matsuyama; H. Asada; S. Ikeda; K. Taniguchi

doi:10.1109/20.617918

Low current magnetic-ram memory operation with a high sensitive spin valve material

K. Matsuyama, H. Asada, S. Ikeda, K. Taniguchi

Electronic Devices

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

Bistable bit state changes of a magnetic-RAM memory cell (2 × 5 μm²) made with a high sensitive spin valve material were performed with pulsed conductor currents I_w of 5,5 mA/μm for parallel to antiparallel and 3,0 mA/μm for the reverse switching. An evaporated spin valve of NiFe(6 nm)/Co(1-2 nm)/Cu(5 nm)/Co(6 nm) was used for the material. Output voltage change of 1 mV was obtained for a sense current of 0,5 mA due to the MR change of 3 %, A threshold of I_w for the state change was decreased 20 % by applying a transverse external field of 30 Oe, which confirms the selective write operation with the coincident current selection scheme.

Original language	English
Pages (from-to)	3283-3285
Number of pages	3
Journal	IEEE Transactions on Magnetics
Volume	33
Issue number	5 PART 1
DOIs	https://doi.org/10.1109/20.617918
Publication status	Published - 1997

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/20.617918

Cite this

@article{59eb373eab5441eeaac4ba83697fea0a,

title = "Low current magnetic-ram memory operation with a high sensitive spin valve material",

abstract = "Bistable bit state changes of a magnetic-RAM memory cell (2 × 5 μm2) made with a high sensitive spin valve material were performed with pulsed conductor currents Iw of 5,5 mA/μm for parallel to antiparallel and 3,0 mA/μm for the reverse switching. An evaporated spin valve of NiFe(6 nm)/Co(1-2 nm)/Cu(5 nm)/Co(6 nm) was used for the material. Output voltage change of 1 mV was obtained for a sense current of 0,5 mA due to the MR change of 3 %, A threshold of Iw for the state change was decreased 20 % by applying a transverse external field of 30 Oe, which confirms the selective write operation with the coincident current selection scheme.",

author = "K. Matsuyama and H. Asada and S. Ikeda and K. Taniguchi",

year = "1997",

doi = "10.1109/20.617918",

language = "English",

volume = "33",

pages = "3283--3285",

journal = "IEEE Transactions on Magnetics",

issn = "0018-9464",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "5 PART 1",

}

TY - JOUR

T1 - Low current magnetic-ram memory operation with a high sensitive spin valve material

AU - Matsuyama, K.

AU - Asada, H.

AU - Ikeda, S.

AU - Taniguchi, K.

PY - 1997

Y1 - 1997

N2 - Bistable bit state changes of a magnetic-RAM memory cell (2 × 5 μm2) made with a high sensitive spin valve material were performed with pulsed conductor currents Iw of 5,5 mA/μm for parallel to antiparallel and 3,0 mA/μm for the reverse switching. An evaporated spin valve of NiFe(6 nm)/Co(1-2 nm)/Cu(5 nm)/Co(6 nm) was used for the material. Output voltage change of 1 mV was obtained for a sense current of 0,5 mA due to the MR change of 3 %, A threshold of Iw for the state change was decreased 20 % by applying a transverse external field of 30 Oe, which confirms the selective write operation with the coincident current selection scheme.

AB - Bistable bit state changes of a magnetic-RAM memory cell (2 × 5 μm2) made with a high sensitive spin valve material were performed with pulsed conductor currents Iw of 5,5 mA/μm for parallel to antiparallel and 3,0 mA/μm for the reverse switching. An evaporated spin valve of NiFe(6 nm)/Co(1-2 nm)/Cu(5 nm)/Co(6 nm) was used for the material. Output voltage change of 1 mV was obtained for a sense current of 0,5 mA due to the MR change of 3 %, A threshold of Iw for the state change was decreased 20 % by applying a transverse external field of 30 Oe, which confirms the selective write operation with the coincident current selection scheme.

UR - http://www.scopus.com/inward/record.url?scp=0031222692&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031222692&partnerID=8YFLogxK

U2 - 10.1109/20.617918

DO - 10.1109/20.617918

M3 - Article

AN - SCOPUS:0031222692

SN - 0018-9464

VL - 33

SP - 3283

EP - 3285

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

IS - 5 PART 1

ER -

Low current magnetic-ram memory operation with a high sensitive spin valve material

Abstract

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Fingerprint

Cite this