Local wet-oxidation characteristic of strained-Si/SiGe-on-insulator

M. Nishisaka, O. Shirata, D. Sakamoto, T. Enokida, H. Hagino, T. Asano

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


We have applied wet oxidation to the isolation and gate oxidation of strained-Si/SiGe-on-insulator (SGOI) wafers. Wet oxidation of Si0.8Ge0.2 at 700 °C proceeds 30 times as fast as the oxidation rate of strained-Si and without forming a Ge condensed layer behind (SiGe)O2. P-channel metal-oxide-semiconductor field-effect transistors (MOSFETs) on 15% Ge strained-Si/SGOI wafers were fabricated using wet oxidation to simultaneously form the (SiGe)O2 field oxide and the gate SiO2. Transconductance was found to be enhanced by 50% when compared with unstrained SOI devices.

Original languageEnglish
Pages (from-to)256-259
Number of pages4
JournalThin Solid Films
Issue number1-2
Publication statusPublished - Jun 5 2006

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry


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