Liquid-phase epitaxial growth of Ge island on insulator using Ni-imprint-induced Si crystal as seed

Kaoru Toko; Takashi Sakane; Takanori Tanaka; Taizoh Sadoh; Masanobu Miyao

doi:10.1016/j.tsf.2009.10.084

Liquid-phase epitaxial growth of Ge island on insulator using Ni-imprint-induced Si crystal as seed

Kaoru Toko, Takashi Sakane, Takanori Tanaka, Taizoh Sadoh, Masanobu Miyao

Electronic Devices

Research output: Contribution to journal › Article › peer-review

Abstract

Liquid-phase epitaxial growth (LPE) of Ge islands on insulator (GOI) using Ni-imprint-induced Si (111) crystal seeds (~ 1 μmφ{symbol}) is investigated. By optimizing cap and bottom SiO₂ layer thickness, single-crystalline GOI (111) structures (~ 10 μmφ{symbol}) are realized. The Raman peaks due to Ge-Ge bonds of the growth regions reveal that the full width at half maximum (FWHM) is equal to that of single-crystalline Ge bulk wafers (3.2 cm^{- 1}). This result demonstrates the very high crystal quality of the growth regions.

Original language	English
Pages (from-to)	S182-S185
Journal	Thin Solid Films
Volume	518
Issue number	6 SUPPL. 1
DOIs	https://doi.org/10.1016/j.tsf.2009.10.084
Publication status	Published - Jan 1 2010

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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10.1016/j.tsf.2009.10.084

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@article{507a26c666f64af9a509aa0466a573a5,

title = "Liquid-phase epitaxial growth of Ge island on insulator using Ni-imprint-induced Si crystal as seed",

abstract = "Liquid-phase epitaxial growth (LPE) of Ge islands on insulator (GOI) using Ni-imprint-induced Si (111) crystal seeds (~ 1 μmφ{symbol}) is investigated. By optimizing cap and bottom SiO2 layer thickness, single-crystalline GOI (111) structures (~ 10 μmφ{symbol}) are realized. The Raman peaks due to Ge-Ge bonds of the growth regions reveal that the full width at half maximum (FWHM) is equal to that of single-crystalline Ge bulk wafers (3.2 cm- 1). This result demonstrates the very high crystal quality of the growth regions.",

author = "Kaoru Toko and Takashi Sakane and Takanori Tanaka and Taizoh Sadoh and Masanobu Miyao",

note = "Funding Information: We are very grateful to Prof. T. Asano and Dr. N. Watanabe of Kyushu University for supplying tip-arrays. This work was partly supported by STARC and a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science, and Technology in Japan .",

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doi = "10.1016/j.tsf.2009.10.084",

language = "English",

volume = "518",

pages = "S182--S185",

journal = "Thin Solid Films",

issn = "0040-6090",

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TY - JOUR

T1 - Liquid-phase epitaxial growth of Ge island on insulator using Ni-imprint-induced Si crystal as seed

AU - Toko, Kaoru

AU - Sakane, Takashi

AU - Tanaka, Takanori

AU - Sadoh, Taizoh

AU - Miyao, Masanobu

N1 - Funding Information: We are very grateful to Prof. T. Asano and Dr. N. Watanabe of Kyushu University for supplying tip-arrays. This work was partly supported by STARC and a Grant-in-Aid for Scientific Research from the Ministry of Education, Culture, Sports, Science, and Technology in Japan .

PY - 2010/1/1

Y1 - 2010/1/1

N2 - Liquid-phase epitaxial growth (LPE) of Ge islands on insulator (GOI) using Ni-imprint-induced Si (111) crystal seeds (~ 1 μmφ{symbol}) is investigated. By optimizing cap and bottom SiO2 layer thickness, single-crystalline GOI (111) structures (~ 10 μmφ{symbol}) are realized. The Raman peaks due to Ge-Ge bonds of the growth regions reveal that the full width at half maximum (FWHM) is equal to that of single-crystalline Ge bulk wafers (3.2 cm- 1). This result demonstrates the very high crystal quality of the growth regions.

AB - Liquid-phase epitaxial growth (LPE) of Ge islands on insulator (GOI) using Ni-imprint-induced Si (111) crystal seeds (~ 1 μmφ{symbol}) is investigated. By optimizing cap and bottom SiO2 layer thickness, single-crystalline GOI (111) structures (~ 10 μmφ{symbol}) are realized. The Raman peaks due to Ge-Ge bonds of the growth regions reveal that the full width at half maximum (FWHM) is equal to that of single-crystalline Ge bulk wafers (3.2 cm- 1). This result demonstrates the very high crystal quality of the growth regions.

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DO - 10.1016/j.tsf.2009.10.084

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SN - 0040-6090

VL - 518

SP - S182-S185

JO - Thin Solid Films

JF - Thin Solid Films

IS - 6 SUPPL. 1

ER -

Liquid-phase epitaxial growth of Ge island on insulator using Ni-imprint-induced Si crystal as seed

Abstract

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