Liquid-injection atomic layer deposition of TiOx and Pb-Ti-O films

Takayuki Watanabe; Susanne Hoffmann-Eifert; Cheol Seong Hwang; Rainer Waser

doi:10.1149/1.2219709

Liquid-injection atomic layer deposition of TiO_x and Pb-Ti-O films

Takayuki Watanabe, Susanne Hoffmann-Eifert, Cheol Seong Hwang, Rainer Waser

Research output: Contribution to journal › Article › peer-review

18 Citations (Scopus)

Abstract

Pb-Ti-O films were prepared by liquid-injection atomic layer deposition (ALD) using H₂O as oxygen source after evaluating Ti precursors with different β-diketonate type ligands, Ti(OC₃H₇) ₂(C₁₁H₁₉O₂)₂ [Ti(Oi-Pr)₂(DPM)₂] and Ti(OC₅H ₁₁)₂(C₁₀H₁₇O₂) ₂ [Ti(Ot-Am)₂(IBPM)₂], dissolved in ethylcyclohexane. For both Ti precursors, the apparent thermal activation energy of the deposition rate of TiO_x films increased at a deposition temperature of about 380°C, and the deposition rate of TiO_x films grown al 300°C saturated against the volume of injected Ti precursors. Ti(Oi-Pr)₂(DPM)₂ was selected for the subsequent Pb-Ti-O film deposition because of its high precursor efficiency and the low temperature dependence of the deposition rate. Pb-Ti-O films were prepared using Ti(Oi-Pr)₂(DPM)₂ and Pb(C₁₂H₂₁O ₂)₂ [Pb(TMOD)₂] at deposition temperatures of 240 and 300°C. The deposition rates of Pb and Ti in the Pb-Ti-O process were higher man those in binary PbO and TiO_x processes under the same deposition conditions. The deposition rate of Pb in the Pb-Ti-O process showed a linear increase in response to the injected Pb precursor volume, which was different from the saturated deposition rate of the PbO process. The interface chemistry between the precursors and predeposited cation layers has critical impact on the self-regulated growth mechanism in the multicomponent oxide ALD.

Original language	English
Pages (from-to)	F199-F204
Journal	Journal of the Electrochemical Society
Volume	153
Issue number	9
DOIs	https://doi.org/10.1149/1.2219709
Publication status	Published - Oct 24 2006
Externally published	Yes

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Renewable Energy, Sustainability and the Environment
Surfaces, Coatings and Films
Electrochemistry
Materials Chemistry

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

Access to Document

10.1149/1.2219709

Cite this

@article{8176576e601245e78f6960a1e132c49f,

title = "Liquid-injection atomic layer deposition of TiOx and Pb-Ti-O films",

abstract = "Pb-Ti-O films were prepared by liquid-injection atomic layer deposition (ALD) using H2O as oxygen source after evaluating Ti precursors with different β-diketonate type ligands, Ti(OC3H7) 2(C11H19O2)2 [Ti(Oi-Pr)2(DPM)2] and Ti(OC5H 11)2(C10H17O2) 2 [Ti(Ot-Am)2(IBPM)2], dissolved in ethylcyclohexane. For both Ti precursors, the apparent thermal activation energy of the deposition rate of TiOx films increased at a deposition temperature of about 380°C, and the deposition rate of TiOx films grown al 300°C saturated against the volume of injected Ti precursors. Ti(Oi-Pr)2(DPM)2 was selected for the subsequent Pb-Ti-O film deposition because of its high precursor efficiency and the low temperature dependence of the deposition rate. Pb-Ti-O films were prepared using Ti(Oi-Pr)2(DPM)2 and Pb(C12H21O 2)2 [Pb(TMOD)2] at deposition temperatures of 240 and 300°C. The deposition rates of Pb and Ti in the Pb-Ti-O process were higher man those in binary PbO and TiOx processes under the same deposition conditions. The deposition rate of Pb in the Pb-Ti-O process showed a linear increase in response to the injected Pb precursor volume, which was different from the saturated deposition rate of the PbO process. The interface chemistry between the precursors and predeposited cation layers has critical impact on the self-regulated growth mechanism in the multicomponent oxide ALD.",

author = "Takayuki Watanabe and Susanne Hoffmann-Eifert and Hwang, {Cheol Seong} and Rainer Waser",

year = "2006",

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doi = "10.1149/1.2219709",

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T1 - Liquid-injection atomic layer deposition of TiOx and Pb-Ti-O films

AU - Watanabe, Takayuki

AU - Hoffmann-Eifert, Susanne

AU - Hwang, Cheol Seong

AU - Waser, Rainer

PY - 2006/10/24

Y1 - 2006/10/24

N2 - Pb-Ti-O films were prepared by liquid-injection atomic layer deposition (ALD) using H2O as oxygen source after evaluating Ti precursors with different β-diketonate type ligands, Ti(OC3H7) 2(C11H19O2)2 [Ti(Oi-Pr)2(DPM)2] and Ti(OC5H 11)2(C10H17O2) 2 [Ti(Ot-Am)2(IBPM)2], dissolved in ethylcyclohexane. For both Ti precursors, the apparent thermal activation energy of the deposition rate of TiOx films increased at a deposition temperature of about 380°C, and the deposition rate of TiOx films grown al 300°C saturated against the volume of injected Ti precursors. Ti(Oi-Pr)2(DPM)2 was selected for the subsequent Pb-Ti-O film deposition because of its high precursor efficiency and the low temperature dependence of the deposition rate. Pb-Ti-O films were prepared using Ti(Oi-Pr)2(DPM)2 and Pb(C12H21O 2)2 [Pb(TMOD)2] at deposition temperatures of 240 and 300°C. The deposition rates of Pb and Ti in the Pb-Ti-O process were higher man those in binary PbO and TiOx processes under the same deposition conditions. The deposition rate of Pb in the Pb-Ti-O process showed a linear increase in response to the injected Pb precursor volume, which was different from the saturated deposition rate of the PbO process. The interface chemistry between the precursors and predeposited cation layers has critical impact on the self-regulated growth mechanism in the multicomponent oxide ALD.

AB - Pb-Ti-O films were prepared by liquid-injection atomic layer deposition (ALD) using H2O as oxygen source after evaluating Ti precursors with different β-diketonate type ligands, Ti(OC3H7) 2(C11H19O2)2 [Ti(Oi-Pr)2(DPM)2] and Ti(OC5H 11)2(C10H17O2) 2 [Ti(Ot-Am)2(IBPM)2], dissolved in ethylcyclohexane. For both Ti precursors, the apparent thermal activation energy of the deposition rate of TiOx films increased at a deposition temperature of about 380°C, and the deposition rate of TiOx films grown al 300°C saturated against the volume of injected Ti precursors. Ti(Oi-Pr)2(DPM)2 was selected for the subsequent Pb-Ti-O film deposition because of its high precursor efficiency and the low temperature dependence of the deposition rate. Pb-Ti-O films were prepared using Ti(Oi-Pr)2(DPM)2 and Pb(C12H21O 2)2 [Pb(TMOD)2] at deposition temperatures of 240 and 300°C. The deposition rates of Pb and Ti in the Pb-Ti-O process were higher man those in binary PbO and TiOx processes under the same deposition conditions. The deposition rate of Pb in the Pb-Ti-O process showed a linear increase in response to the injected Pb precursor volume, which was different from the saturated deposition rate of the PbO process. The interface chemistry between the precursors and predeposited cation layers has critical impact on the self-regulated growth mechanism in the multicomponent oxide ALD.

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