Liquid injection atomic layer deposition of Pb(Zr,Ti)O3 thin films on three dimensional structures

Takayuki Watanabe; Susanne Hoffmann-Eifert; Rainer Waser; Cheol Seong Hwang

doi:10.1109/ISAF.2007.4393199

Liquid injection atomic layer deposition of Pb(Zr,Ti)O₃ thin films on three dimensional structures

Takayuki Watanabe, Susanne Hoffmann-Eifert, Rainer Waser, Cheol Seong Hwang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

6 Citations (Scopus)

Abstract

A liquid injection atomic layer deposition (ALD) process has been developed for conformal deposition of lead zirconate titanate thin films on three dimensional structured silicon substrates. Future applications of these structures address the field of nonvolatile ferroelectric memory devices. PZT films were prepared by mixing the binary ALD processes of PbO_x, TiO_x, and ZrO_x. It was found that the type of precursors as well as the stacking sequence of the binary oxide layers is crucial for the control of film stoichiometry and for a saturation of the film growth behaviour characteristic for ALD processes. Using an optimized ALD process the molar ratios of Pb/(Ti+Zr) as well as Zr/(Ti+Zr) in the films show a saturation behaviour against an increasing precursor injection volume. Pb(Zr _xTi_1-x)O₃ films deposited on 3D structured silicon exhibited a uniform film thickness and a homogeneous cation composition over the complex structure.

Original language	English
Title of host publication	2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
Pages	156-158
Number of pages	3
DOIs	https://doi.org/10.1109/ISAF.2007.4393199
Publication status	Published - 2007
Externally published	Yes
Event	2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF - Nara-city, Japan Duration: May 27 2007 → May 31 2007

Publication series

Name	IEEE International Symposium on Applications of Ferroelectrics

Other

Other	2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF
Country/Territory	Japan
City	Nara-city
Period	5/27/07 → 5/31/07

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Access to Document

10.1109/ISAF.2007.4393199

Cite this

Watanabe, T., Hoffmann-Eifert, S., Waser, R., & Hwang, C. S. (2007). Liquid injection atomic layer deposition of Pb(Zr,Ti)O₃ thin films on three dimensional structures. In 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF (pp. 156-158). Article 4393199 (IEEE International Symposium on Applications of Ferroelectrics). https://doi.org/10.1109/ISAF.2007.4393199

Liquid injection atomic layer deposition of Pb(Zr,Ti)O₃ thin films on three dimensional structures. / Watanabe, Takayuki; Hoffmann-Eifert, Susanne; Waser, Rainer et al.
2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF. 2007. p. 156-158 4393199 (IEEE International Symposium on Applications of Ferroelectrics).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Watanabe, T, Hoffmann-Eifert, S, Waser, R & Hwang, CS 2007, Liquid injection atomic layer deposition of Pb(Zr,Ti)O₃ thin films on three dimensional structures. in 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF., 4393199, IEEE International Symposium on Applications of Ferroelectrics, pp. 156-158, 2007 16th IEEE International Symposium on the Applications of Ferroelectrics, ISAF, Nara-city, Japan, 5/27/07. https://doi.org/10.1109/ISAF.2007.4393199

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abstract = "A liquid injection atomic layer deposition (ALD) process has been developed for conformal deposition of lead zirconate titanate thin films on three dimensional structured silicon substrates. Future applications of these structures address the field of nonvolatile ferroelectric memory devices. PZT films were prepared by mixing the binary ALD processes of PbOx, TiOx, and ZrOx. It was found that the type of precursors as well as the stacking sequence of the binary oxide layers is crucial for the control of film stoichiometry and for a saturation of the film growth behaviour characteristic for ALD processes. Using an optimized ALD process the molar ratios of Pb/(Ti+Zr) as well as Zr/(Ti+Zr) in the films show a saturation behaviour against an increasing precursor injection volume. Pb(Zr xTi1-x)O3 films deposited on 3D structured silicon exhibited a uniform film thickness and a homogeneous cation composition over the complex structure.",

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AB - A liquid injection atomic layer deposition (ALD) process has been developed for conformal deposition of lead zirconate titanate thin films on three dimensional structured silicon substrates. Future applications of these structures address the field of nonvolatile ferroelectric memory devices. PZT films were prepared by mixing the binary ALD processes of PbOx, TiOx, and ZrOx. It was found that the type of precursors as well as the stacking sequence of the binary oxide layers is crucial for the control of film stoichiometry and for a saturation of the film growth behaviour characteristic for ALD processes. Using an optimized ALD process the molar ratios of Pb/(Ti+Zr) as well as Zr/(Ti+Zr) in the films show a saturation behaviour against an increasing precursor injection volume. Pb(Zr xTi1-x)O3 films deposited on 3D structured silicon exhibited a uniform film thickness and a homogeneous cation composition over the complex structure.

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